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Open Access research with a European policy impact...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by Strathclyde researchers, including by researchers from the European Policies Research Centre (EPRC).

EPRC is a leading institute in Europe for comparative research on public policy, with a particular focus on regional development policies. Spanning 30 European countries, EPRC research programmes have a strong emphasis on applied research and knowledge exchange, including the provision of policy advice to EU institutions and national and sub-national government authorities throughout Europe.

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Article

Bryce, C. G. and Le Boulbar, E. D. and Coulon, P.-M. and Edwards, P. R. and Gîrgel, I. and Allsopp, D. W. E. and Shields, P. A. and Martin, R. W. (2017) Quantum well engineering in InGaN/GaN core-shell nanorod structures. Journal of Physics D: Applied Physics. ISSN 0022-3727 (In Press)

Bruckbauer, Jochen and Li, Zhi and Gunasekar, Naresh and Warzecha, Monika and Edwards, Paul R. and Jiu, Ling and Bai, Jie and Wang, Tao and Trager-Cowan, Carol and Martin, Robert W. (2017) Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56. Scientific Reports, 7. ISSN 2045-2322

Ni, Chengsheng and Hedley, Gordon J. and Payne, Julia and Svrcek, Vladimir and McDonald, Calum and Jagadamma, Lethy Krishnan and Edwards, Paul and Martin, Robert and Mariotti, Davide and Maguire, Paul and Samuel, Ifor and Irvine, John (2017) Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusters. Nature Communications, 8. ISSN 2041-1723

Yakushev, M. V. and Sulimov, M. A. and Márquez-Prieto, J. and Forbes, I. and Krustok, J. and Edwards, P. R. and Zhivulko, V. D. and Borodavchenko, O. M. and Mudryi, A. V. and Martin, R. W. (2017) Influence of the copper content on the optical properties of CZTSe thin films. Solar Energy Materials and Solar Cells, 168. pp. 69-77. ISSN 0927-0248

Mudryi, A.V. and Yakushev, M.V. and Volkov, V.A. and Zhivulko, V.D. and Borodavchenko, O.M. and Martin, R.W. (2017) Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals. Journal of Luminescence, 186. pp. 123-126. ISSN 0022-2313

Griffiths, J. T. and Ren, C. X. and Coulon, P.-M. and Le Boulbar, E. D. and Bryce, C. G. and Girgel, I. and Howkins, A. and Boyd, I. and Martin, R. W. and Allsopp, D. W. E. and Shields, P. A. and Humphreys, C. J. and Oliver, R. A. (2017) Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. Applied Physics Letters, 110. ISSN 0003-6951

Magalhães, S and Franco, N and Watson, I M and Martin, R W and O'Donnell, K P and Schenk, H P D and Tang, F and Sadler, T C and Kappers, M J and Oliver, R A and Monteiro, T and Martin, T L and Bagot, P A J and Moody, M P and Alves, E and Lorenz, K (2017) Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates. Journal of Physics D: Applied Physics, 50. ISSN 0022-3727

Li, Z. and Wang, L. and Jiu, L. and Bruckbauer, J. and Gong, Y. and Zhang, Y. and Bai, J. and Martin, R. W. and Wang, T. (2017) Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition. Applied Physics Letters, 110 (9). ISSN 0003-6951

Kusch, Gunnar and Mehnke, Frank and Enslin, Johannes and Edwards, Paul R and Wernicke, Tim and Kneissl, Michael and Martin, Robert W (2017) Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy. Semiconductor Science and Technology, 32 (3). ISSN 0268-1242

Coulon, Pierre-Marie and Vajargah, Shahrzad hosseini and Bao, An and Edwards, Paul R. and Le Boulbar, Emmanuel D. and Girgel, Ionut and Martin, Robert W. and Humphreys, Colin J. and Oliver, Rachel A. and Allsopp, Duncan W. E. and Shields, Philip A. (2017) Evolution of the m-plane quantum well morphology and composition within a GaN/InGaN core–shell structure. Crystal Growth and Design, 17 (2). pp. 474-482. ISSN 1528-7483

Tian, Pengfei and Edwards, Paul R. and Wallace, Michael J. and Martin, Robert W. and McKendry, Jonathan J.D. and Gu, Erdan and Dawson, Martin D. and Qiu, Zhi-Jun and Jia, Chuanyu and Chen, Zhizhong and Zhang, Guoyi and Zheng, Lirong and Liu, Ran (2017) Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD. Journal of Physics D: Applied Physics, 50 (7). ISSN 0022-3727

Núñez-Cascajero, A and Valdueza-Felip, S and Monteagudo-Lerma, L and Monroy, E and Taylor-Shaw, E and Martin, R W and González-Herráez, M and Naranjo, F B (2017) In-rich AlxIn1−xN grown by RF-sputtering on sapphire : from closely-packed columnar to high-surface quality compact layers. Journal of Physics D: Applied Physics, 50 (6). ISSN 0022-3727

Conroy, Michelle and Li, Haoning and Zubialevich, Vitaly Z. and Kusch, Gunnar and Schmidt, Michael and Collins, Timothy and Glynn, Colm and Martin, Robert W. and O'Dwyer, Colm and Holmes, Justin D. and Parbrook, Peter J. and Morris, Michael D. (2016) Self-healing thermal annealing : surface morphological restructuring control of GaN nanorods. Crystal Growth and Design, 16 (12). pp. 6769-6775. ISSN 1528-7483

Ren, C.X. and Rouet-Leduc, B. and Griffiths, J.T. and Bohacek, E. and Wallace, M.J. and Edwards, P.R. and Hopkins, M.A. and Allsopp, D.W.E. and Kappers, M.J. and Martin, R.W. and Oliver, R.A. (2016) Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs. Superlattices and Microstructures, 99. pp. 118-124. ISSN 0749-6036

Taylor-Shaw, Elaine and Angioni, Enrico and Findlay, Neil J. and Breig, Benjamin and Inigo, Anto R. and Bruckbauer, Jochen and Wallis, David J. and Skabara, Peter J. and Martin, Robert W. (2016) Cool to warm white light emission from hybrid inorganic/organic light-emitting diodes. Journal of Materials Chemistry. C, 4 (48). pp. 11499-11507. ISSN 2050-7526

Bruckbauer, Jochen and Brasser, Catherine and Findlay, Neil J. and Edwards, Paul R. and Wallis, David J. and Skabara, Peter J. and Martin, Robert W. (2016) Colour tuning in white hybrid inorganic/organic light-emitting diodes. Journal of Physics D: Applied Physics, 49 (40). ISSN 0022-3727

Sarney, Wendy L. and Svensson, Stefan P. and Ting, Min and Segercrantz, Natalie and Walukiewicz, Wladek and Yu, Kin Man and Martin, Robert W. and Novikov, Sergei V. and Foxon, C.T. Thomas (2016) Intermixing studies in GaN1−xSbx highly mismatched alloys. Applied Optics. ISSN 1559-128X (In Press)

Márquez-Prieto, J. and Yakushev, M. V. and Forbes, I. and Krustok, J. and Edwards, P. R. and Zhivulko, V. D. and Borodavchenko, O. M. and Mudryi, A. V. and Dimitrievska, M. and Izquierdo-Roca, V. and Pearsall, N. and Martin, R. W. (2016) Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers. Solar Energy Materials and Solar Cells, 152. pp. 42-50. ISSN 0927-0248

Conroy, M. and Li, H. and Kusch, G. and Zhao, C. and Ooi, B. and Edwards, P. R. and Martin, R. W. and Holmes, J. D. and Parbrook, P. J. (2016) Correction: Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods. Nanoscale, 8 (27). p. 13521. ISSN 2040-3372

Yu, K M and Sarney, W L and Novikov, S V and Segercrantz, N and Ting, M and Shaw, M and Svensson, S P and Martin, R W and Walukiewicz, W and Foxon, C T (2016) Highly mismatched GaN1-xSbx alloys : synthesis, structure and electronic properties. Semiconductor Science and Technology, 31 (8). ISSN 0268-1242

Naresh-Kumar, G. and Thomson, D. and Nouf-Allehiani, M. and Bruckbauer, J. and Edwards, P. R. and Hourahine, B. and Martin, R.W. and Trager-Cowan, C. (2016) Electron channelling contrast imaging for III-nitride thin film structures. Materials Science in Semiconductor Processing, 47. pp. 44-50. ISSN 1369-8001

Conroy, M. and Li, H. and Kusch, G. and Zhao, C. and Ooi, B. and Edwards, P. R. and Martin, R. W. and Holmes, J. D. and Parbrook, P. J. (2016) Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods. Nanoscale, 8 (21). pp. 11019-11026. ISSN 2040-3372

Le Boulbar, E mmanuel D. and Edwards, Paul R. and Vajargah, Shahrzad Hosseini and Griffiths, Ian and Gîrgel, Ionut and Coulon, Pierre - Marie and Cherns, David and Martin, Robert W. and Humphreys, C. J. and Bowen, Chris R. and Allsopp, D. W. E. and Shields, P. A. (2016) Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods. Crystal Growth and Design, 16 (4). 1907–1916. ISSN 1528-7483

Gîrgel, Ionut and Edwards, Paul R. and Le Boulbar, Emmanuel and Coulon, Pierre-Marie and Sahonta, Suman-Lata and Allsopp, Duncan W. E. and Martin, Robert W. and Humphreys, Colin J. and Shields, Philip A. (2016) Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes. Journal of Nanophotonics, 10 (1). ISSN 1934-2608

Yakushev, M. V. and Krustok, J. and Grossberg, M. and Volkov, V. A. and Mudryi, A. V. and Martin, R. W. (2016) A photoluminescence study of CuInSe2 single crystals ion implanted with 5 keV hydrogen. Journal of Physics D: Applied Physics, 49 (10). ISSN 0022-3727

Svitsiankou, I E and Pavlovskii, V N and Lutsenko, EV and Yablonskii, G P and Mudryi, A V and Zhivulko, VD and Yakushev, M V and Martin, R W (2016) Stimulated emission and lasing in Cu(In,Ga)Se2 thin films. Journal of Physics D: Applied Physics, 49 (9). ISSN 0022-3727

Ohnoutek, L. and Hakl, M. and Veis, M. and Piot, B. A. and Faugeras, C. and Martinez, G. and Yakushev, M. V. and Martin, R. W. and Drasar, C. and Materna, A. and Strzelecka, G. and Hruban, A. and Potemski, M. and Orlita, M. (2016) Strong interband Faraday rotation in 3D topological insulator Bi2Se3. Scientific Reports, 6. ISSN 2045-2322

Yakushev, M V and Márquez-Prieto, J and Forbes, I and Edwards, P R and Zhivulko, V D and Mudryi, A V and Krustok, J and Martin, R W (2015) Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess. Journal of Physics D: Applied Physics, 48 (47). ISSN 0022-3727

Yakushev, M. V. and Mudryi, A. V. and Borodavchenko, O. M. and Volkov, V. A. and Martin, R. W. (2015) A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 Mev electrons. Journal of Applied Physics, 118 (15). ISSN 0021-8979

Kusch, Gunnar and Nouf-Allehiani, M. and Mehnke, Frank and Kuhn, Christian and Edwards, Paul R. and Wernicke, Tim and Knauer, Arne and Kueller, Viola and Naresh-Kumar, G. and Weyers, Markus and Kneissl, Michael and Trager-Cowan, Carol and Martin, Robert W. (2015) Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N. Applied Physics Letters, 107 (7). ISSN 0003-6951

Yakushev, M.V. and Forbes, I. and Mudryi, A.V. and Grossberg, M. and Krustok, J. and Beattie, N.S. and Moynihan, M. and Rockett, A. and Martin, R.W. (2015) Optical spectroscopy studies of Cu2ZnSnSe4 thin films. Thin Solid Films, 582. pp. 154-157. ISSN 0040-6090

Gîrgel, Ionut and Edwards, Paul R. and Le Boulbar, Emmanuel and Allsopp, Duncan W. E. and Martin, Robert W. and Shields, Philip A. (2015) Investigation of facet-dependent InGaN growth for core-shell LEDs. Proceedings of SPIE, 9363. ISSN 0277-786X

Novikov, Sergei V. and Staddon, C.R. and Martin, Robert and Kent, A.J. and Foxon, C. Thomas (2015) Molecular beam epitaxy of free-standing wurtzite AlxGa1xN layers. Journal of Crystal Growth, 425. p. 125. ISSN 0022-0248

Magalhães, S. and Watson, I. M. and Pereira, S. and Franco, N. and Tan, L. T. and Martin, R. W. and O'Donnell, K. P. and Alves, E. and Araújo, J. P. and Monteiro, T. and Lorenz, K. (2015) Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents. Journal of Physics D: Applied Physics, 48 (1). ISSN 0022-3727

Wallace, M. J. and Edwards, P. R. and Kappers, M. J. and Hopkins, M. A. and Oehler, F. and Sivaraya, S. and Oliver, R. A. and Humphreys, C. J. and Allsopp, D. W. E. and Martin, R. W. (2015) Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117 (11). ISSN 0021-8979

Taylor, E. and Smith, M.D. and Sadler, T.C. and Lorenz, K. and Li, H.N. and Alves, E. and Parbrook, P.J. and Martin, R.W. (2014) Structural and optical properties of Ga auto-incorporated InAlN epilayers. Journal of Crystal Growth, 408. pp. 97-101. ISSN 0022-0248

Findlay, Neil J. and Bruckbauer, Jochen and Inigo, Anto R. and Breig, Benjamin and Arumugam, Sasikumar and Wallis, David J. and Martin, Robert W. and Skabara, Peter J. (2014) Light-emitting diodes : an organic down-converting material for white-light emission from hybrid LEDs (Adv. Mater. 43/2014). Advanced Materials, 26 (43). p. 7415. ISSN 1521-4095

Findlay, Neil and Bruckbauer, Jochen and Inigo, Jesuraj and Breig, Benjamin and Arumugam, Sasikumar and Wallis, David J. and Martin, Robert and Skabara, Peter (2014) An organic down-converting material for white-light emission from hybrid LEDs. Advanced Materials, 26 (43). 7290–7294. ISSN 1521-4095

Zhuang, Y. D. and Bruckbauer, J. and Shields, P. A. and Edwards, P. R. and Martin, R. W. and Allsopp, D. W. E. (2014) Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk. Journal of Applied Physics, 116 (17). ISSN 0021-8979

Shaw, Martin and Yu, K.M. and Ting, M. and Powell, R. E. L. and Sarney, W. L. and Svensson, S. P. and Kent, A. J. and Walukiewicz, W. and Foxon, C. T. and Novikov, S. V. and Martin, Robert W. (2014) Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE. Journal of Physics D: Applied Physics, 47 (46). ISSN 0022-3727

Novikov, S. V. and Ting, M. and Yu, K.M. and Sarney, W.L. and Martin, R.W. and Svensson, S.P. and Walukiewicz, W. and Foxon, C.T. (2014) Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 404. pp. 9-13. ISSN 0022-0248

Yakushev, M. V. and Rodina, A. V. and Shuchalin, G. M. and Seisian, R. P. and Abdullaev, M. A. and Rockett, A. and Zhivulko, V. D. and Mudryi, A. V. and Faugeras, C. and Martin, R. W. (2014) Landau levels of the C-exciton in CuInSe2 studied by magneto-transmission. Applied Physics Letters, 105 (14). ISSN 0003-6951

Yu, K.M. and Novikov, S. V. and Ting, Min and Sarney, W.L. and Svensson, S.P. and Shaw, M. and Martin, R.W. and Walukiewicz, W. and Foxon, C.T. (2014) Growth and characterization of highly mismatched GaN1-xSbx alloys. Journal of Applied Physics, 116 (12). ISSN 0021-8979

Ajia, Idris A. and Edwards, P. R. and Liu, Z. and Yan, J. C. and Martin, R. W. and Roqan, I. S. (2014) Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries. Applied Physics Letters, 105 (12). ISSN 0003-6951

Edwards, Paul R. and Wallace, Michael J. and Kusch, Gunnar and Naresh-Kumar, Gunasekar and Bruckbauer, Jochen and Trager-Cowan, Carol and O'Donnell, Kevin P. and Martin, Robert W. (2014) Cathodoluminescence hyperspectral imaging of nitride semiconductors : introducing new variables. Microscopy and Microanalysis, 20 (S3). pp. 906-907. ISSN 1435-8115

Trager-Cowan, C. and Naresh-Kumar, G. and Allehiani, N. and Kraeusel, S. and Hourahine, B. and Vespucci, S. and Thomson, D. and Bruckbauer, J. and Kusch, G. and Edwards, P. R. and Martin, R. W. and Mauder, C. and Day, A. P. and Winkelmann, A. and Vilalta-Clemente, A. and Wilkinson, A. J. and Parbrook, P. J. and Kappers, M. J. and Moram, M. A. and Oliver, R. A. and Humphreys, C. J. and Shields, P. and Le Boulbar, E. D. and Maneuski, D. and O'Shea, V. and Mingard, K. P. (2014) Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20 (S3). pp. 1024-1025. ISSN 1435-8115

Bruckbauer, Jochen and Edwards, Paul R and Sahonta, Suman-Lata and Massabuau, Fabien C-P and Kappers, Menno J and Humphreys, Colin J and Oliver, Rachel A and Martin, Robert W (2014) Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures. Journal of Physics D: Applied Physics, 47 (13). p. 135107. ISSN 0022-3727

Kusch, Gunnar and Li, Haoning and Edwards, Paul R. and Bruckbauer, Jochen and Sadler, Thomas C. and Parbrook, Peter J. and Martin, Robert W. (2014) Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN. Applied Physics Letters, 104 (9). ISSN 0003-6951

Naresh-Kumar, G. and Bruckbauer, J. and Edwards, P. R. and Kraeusel, S. and Hourahine, B. and Martin, R. W. and Kappers, M. J. and Moram, M. A. and Lovelock, S. and Oliver, R. A. and Humphreys, C. J. and Trager-Cowan, C. (2014) Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN. Microscopy and Microanalysis, 20 (1). pp. 55-60. ISSN 1431-9276

Wei, Z. and Senthilarasu, S. and Yakushev, M.V. and Martin, R.W. and Upadhyaya, H.M. (2014) Effect of mechanical compression on Cu(In,Ga)Se films : micro-structural and photoluminescence analysis. RSC Advances, 4 (10). pp. 5141-5147. ISSN 2046-2069

Wallace, M. J. and Edwards, P. R. and Kappers, M. J. and Hopkins, M. A. and Oehler, F. and Sivaraya, S. and Allsopp, D. W. E. and Oliver, R. A. and Humphreys, C. J. and Martin, R. W. (2014) Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, 116 (3). ISSN 0021-8979

Smith, M. D. and Taylor, E. and Sadler, T. C. and Zubialevich, V. Z. and Lorenz, K. and Li, H. N. and O'Connell, J. and Alves, E. and Holmes, J. D. and Martin, R. W. and Parbrook, P. J. (2014) Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry. C, 2 (29). pp. 5787-5792. ISSN 2050-7526

Yakushev, M.V. and Maiello, P. and Raadik, T. and Shaw, M.J. and Edwards, P.R. and Krustok, J. and Mudryi, A.V. and Forbes, I. and Martin, R.W. (2014) Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics. Thin Solid Films, 562. pp. 195-199. ISSN 0040-6090

Yakushev, M.V. and Maiello, P. and Raadik, T. and Shaw, M.J. and Edwards, P.R. and Krustok, J. and Mudryi, A.V. and Forbes, I. and Martin, R.W. (2014) Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films. Energy Procedia, 60. pp. 166-172. ISSN 1876-6102

Lewins, C. J. and Le Boulbar, E. D. and Lis, S. M. and Edwards, P. R. and Martin, R. W. and Shields, P. A. and Allsopp, D. W. E. (2014) Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes. Journal of Applied Physics, 116 (4). ISSN 0021-8979

Schulz, S. and Caro, M.A. and Tan, L.-T. and Parbrook, P.J. and Martin, R.W. and O'Reilly, E.P. (2013) Composition-dependent band gap and band-edge bowing in AIInN : a combined theoretical and experimental study. Applied Physics Express, 6 (12). ISSN 1882-0778

Bruckbauer, Jochen and Edwards, Paul R and Bai, Jie and Wang, Tao and Martin, Robert W (2013) Probing light emission from quantum wells within a single nanorod. Nanotechnology, 24 (36).

Zhuang, Yi D. and Lis, Szymon and Bruckbauer, Jochen and O'Kane, Simon E. J. and Shields, Philip A. and Edwards, Paul R. and Sarma, Jayanta and Martin, Robert W. and Allsopp, Duncan W. E. (2013) Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells. Japanese Journal of Applied Physics, 52.

Taylor, E and Fang, F and Oehler, F and Edwards, P R and Kappers, M J and Lorenz, K and Alves, E and McAleese, C and Humphreys, C J and Martin, R W (2013) Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates. Semiconductor Science and Technology, 28 (6).

Novikov, S.V. and Yu, K.M. and Levander, A. and Detert, D. and Sarney, W.L. and Liliental-Weber, Z. and Shaw, M. and Martin, R.W. and Svensson, S.P. and Walukiewicz, W. and Foxon, C.T. (2013) Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (3). ISSN 1071-1023

Kaminska, Agata and Nowakowski, Piotr and Staszczak, Grzegorz and Suski, Tadeusz and Suchocki, Andrzej and Carlin, Jean François and Grandjean, Nicolas and Martin, Robert and Yamamoto, Akio (2013) Peculiarities in the pressure dependence of photoluminescence in InAlN. Physica Status Solidi B, 250 (4). pp. 677-682. ISSN 0370-1972

Le Boulbar, E D and Gîrgel, I and Lewins, C and Edwards, P R and Martin, R W and Satka, A and Allsopp, D W E and Shields, P A (2013) Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays. Journal of Applied Physics, 114.

Findlay, Neil J. and Orofino-Pena, Clara and Bruckbauer, Jochen and Elmasly, Saadeldin E. T. and Arumugam, Sasikumar and Inigo, Anto R. and Kanibolotsky, Alexander L. and Martin, Robert W. and Skabara, Peter J. (2013) Linear oligofluorene-BODIPY structures for fluorescence applications. Journal of Materials Chemistry. C, 1 (11). pp. 2249-2256. ISSN 2050-7526

Yakushev, Michael V and Luckert, Franziska and Rodina, A.V. and Faugeras, C. and Karotki, A.V. and Mudryi, A.V. and Martin, Robert (2012) Anisotropy of effective masses in CuInSe2. Applied Physics Letters, 101. ISSN 0003-6951

Edwards, Paul R. and Krishnan Jagadamma, Lethy and Bruckbauer, Jochen and Liu, Chaowang and Shields, Philip and Allsopp, Duncan and Wang, Tao and Martin, Robert W. (2012) High-resolution cathodoluminescence hyperspectral imaging of nitride nanostructures. Microscopy and Microanalysis, 18 (6). pp. 1212-1219. ISSN 1431-9276

Kuznetsova, T. V. and Grebennikov, V. I. and Zhao, H. and Derks, C. and Taubitz, C. and Neumann, M. and Persson, C. and Kuznetsov, M. V. and Bodnar, I. V. and Martin, R. W. and Yakushev, M. V. (2012) A photoelectron spectroscopy study of the electronic structure evolution in CuInSe2-related compounds at changing copper content. Applied Physics Letters, 101 (11). ISSN 0003-6951

Vennegues, P. and Diaby, B. S. and Kim-Chauveau, H. and Bodiou, L. and Schenk, H. P. D. and Frayssinet, E. and Martin, R. W. and Watson, I. M. (2012) Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters. Journal of Crystal Growth, 353 (1). pp. 108-114. ISSN 0022-0248

Xie, E. Y. and Chen, Z. Z. and Edwards, P. R. and Gong, Z. and Liu, N. Y. and Tao, Y. B. and Zhang, Y. F. and Chen, Y. J. and Watson, I. M. and Gu, E. and Martin, R. W. and Zhang, G. Y. and Dawson, M. D. (2012) Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging. Journal of Applied Physics, 112 (1).

Novikov, S. V. and Staddon, C. R. and Luckert, F. and Edwards, P. R. and Martin, R. W. and Kent, A. J. and Foxon, C. T. (2012) Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy. Journal of Crystal Growth, 350 (1). pp. 80-84. ISSN 0022-0248

Lethy, K. J. and Edwards, P. R. and Liu, C. and Wang, W. N. and Martin, R. W. (2012) Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array. Journal of Applied Physics, 112 (2). ISSN 0021-8979

Lethy, K J and Edwards, P R and Liu, C and Shields, P A and Allsopp, D W E and Martin, R W (2012) Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE. Semiconductor Science and Technology, 27 (8).

Luckert, F. and Yakushev, M. V. and Faugeras, C. and Karotki, A. V. and Mudryi, A. V. and Martin, R. W. (2012) Excitation power and temperature dependence of excitons in CuInSe2. Journal of Applied Physics, 111 (9). ISSN 0021-8979

Taylor, Elaine and Edwards, Paul and Martin, Robert (2012) Colorimetry and efficiency of white LEDs : Spectral width dependence. Physica Status Solidi A: Applications and Materials Science, 209 (3). pp. 461-464. ISSN 0031-8965

Kachkanov, V. and Dolbnya, I. P. and O'Donnell, K. P. and Lorenz, K. and Pereira, S. and Martin, R. W. and Edwards, P. R. and Watson, I. M. (2012) Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping. MRS Online Proceedings Library, 1396.

Novikov, S.V. and Yu, K.M. and Levander, A.X. and Liliental-Weber, Z. and dos Reis, R. and Kent, A.J. and Tseng, A. and Dubon, O.D. and Wu, J. and Denlinger, J. and Walukiewicz, W. and Luckert, Franziska and Edwards, Paul and Martin, Robert and Foxon, C.T. (2012) Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content. Physica Status Solidi A: Applications and Materials Science, 209 (3). pp. 419-423. ISSN 0031-8965

Trager-Cowan, Carol and Gunasekar, Naresh and Hourahine, Benjamin and Edwards, Paul and Bruckbauer, Jochen and Martin, Robert and Mauder, Christof and Day, Austin and England, Gordon and Winkelmann, Aimo and Parbrook, Peter and Wilkinson, Anjus (2012) Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films. Microscopy and Microanalysis, 18 (S2). pp. 684-685. ISSN 1431-9276

Powell, R. E. L. and Novikov, S. V. and Luckert, F. and Edwards, P. R. and Akimov, A. V. and Foxon, C. T. and Martin, R. W. and Kent, A. J. (2011) Carrier localization and related photoluminescence in cubic AlGaN epilayers. Journal of Applied Physics, 110 (6). ISSN 0021-8979

Zachmann, H. and Puttnins, S. and Yakushev, M. V. and Luckert, F. and Martin, R. W. and Karotki, A. V. and Gremenok, V. F. and Mudryi, A. V. (2011) Fabrication and characterisation of Cu(In,Ga)Se-2 solar cells on polyimide. Thin Solid Films, 519 (21). pp. 7264-7267. ISSN 0040-6090

Luckert, F. and Hamilton, D. I. and Yakushev, M. V. and Beattie, N. S. and Zoppi, G. and Moynihan, M. and Forbes, I. and Karotki, A. V. and Mudryi, A. V. and Grossberg, M. and Krustok, J. and Martin, R. W. (2011) Optical properties of high quality Cu2ZnSnSe4 thin films. Applied Physics Letters, 99 (6). -. ISSN 0003-6951

Edwards, Paul and Sleith, David and Wark, Alastair and Martin, Robert (2011) Mapping localized surface plasmons within silver nanocubes using cathodoluminescence hyperspectral imaging. Journal of Physical Chemistry C, 115 (29). 14031–14035.

Edwards, Paul R and Martin, Robert W (2011) Cathodoluminescence nano-characterization of semiconductors. Semiconductor Science and Technology, 26 (6). 064005.

Novikov, S.V. and Staddon, C.R. and Foxon, C.T. and Yu, K.M. and Broesler, R. and Hawkridge, M. and Liliental-Weber, Z. and Denlinger, J. and Demchenko, I. and Luckert, Franziska and Edwards, Paul and Martin, Robert and Walukiewicz, W. (2011) Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices. Journal of Crystal Growth, 323 (1). pp. 60-63. ISSN 0022-0248

Novikov, S.V. and Staddon, C.R. and Foxon, C.T. and Luckert, Franziska and Edwards, Paul and Martin, Robert and Kent, A.J. (2011) Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals. Journal of Crystal Growth, 323 (1). pp. 80-83. ISSN 0022-0248

Novikov, S.V. and Staddon, C.R. and Powell, R.E.L. and Akimov, A.V. and Luckert, F. and Edwards, P.R. and Martin, R.W. and Kent, A.J. and Foxon, C.T. (2011) Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy. Journal of Crystal Growth, 322 (1). pp. 23-26. ISSN 0022-0248

Yakushev, Michael V. and Luckert, Franziska and Faugeras, Clement and Karotki, Anatoli V. and Mudryi, Alexander V. and Martin, Robert W. (2011) Excited states of the A and B free excitons in CuInSe2. Japanese Journal of Applied Physics, 50 (5). ISSN 0021-4922

Bruckbauer, Jochen and Edwards, Paul R. and Wang, Tao and Martin, Robert W. (2011) High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures. Applied Physics Letters, 98 (14).

Kachkanov, V. and Dolbnya, I.P. and O'Donnell, Kevin and Martin, Robert and Edwards, Paul and Pereira, S. (2011) InGaN epilayer characterization by microfocused x-ray reciprocal space mapping. Applied Physics Letters, 99 (18). ISSN 0003-6951

Kachkanov, V. and O'Donnell, K. P. and Rice, C. and Wolverson, D. and Martin, R. W. and Lorenz, K. and Alves, E. and Bockowski, M. (2011) Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN. MRS Online Proceedings Library, 1290. ISSN 1946-4274

Karotki, A. V. and Mudryi, A.V. and Yakushev, Michael V and Luckert, Franziska and Martin, Robert (2010) Structural and optical properties of CdS/Cu(In,Ga)Se-2 heterostructures irradiated by high energy electrons. Journal of Applied Spectroscopy, 77 (5). pp. 668-674. ISSN 0021-9037

Luckert, F. and Yakushev, M. V. and Faugeras, C. and Karotki, A. V. and Mudryi, A. V. and Martin, R. W. (2010) Diamagnetic shift of the A free exciton in CuGaSe2 single crystals. Applied Physics Letters, 97 (16). ISSN 0003-6951

Yakushev, M. V. and Luckert, F. and Faugeras, C. and Karotki, A. V. and Mudryi, A. V. and Martin, R. W. (2010) Excited states of the free excitons in CuInSe2 single crystals. Applied Physics Letters, 97 (15). ISSN 0003-6951

Reveret, F. and Bejtka, K. and Edwards, P. R. and Chenot, S. and Sellers, I. R. and Disseix, P. and Vasson, A. and Leymarie, J. and Duboz, J. Y. and Leroux, M. and Semond, F. and Martin, Robert (2010) Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods. Journal of Applied Physics, 108 (4). ISSN 0021-8979

Lorenz, K. and Magalhaes, S. and Franco, N. and Barradas, N. P. and Darakchieva, V. and Alves, E. and Pereira, S. and Correia, M. R. and Munnik, F. and Martin, R. W. and O'Donnell, K. P. and Watson, I. M. (2010) Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties. Physica Status Solidi B, 247 (7). pp. 1740-1746. ISSN 0370-1972

Mudryi, A. V. and Gremenok, V. F. and Karotki, A. V. and Zalesski, V. B. and Yakushev, M. V. and Luckert, F. and Martin, R. (2010) Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds. Journal of Applied Spectroscopy, 77 (3). pp. 371-377. ISSN 0021-9037

Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Edwards, P.R. and Song, S.F. and Vantomme, A. and Lorenz, K. and Alves, E. and Boćkowski, M. (2010) Identification of the prime optical center in GaN:Eu3+. Physical Review B, 81 (1). ISSN 1098-0121

Xiong, C. and Edwards, P.R. and Christmann, G. and Gu, E. and Dawson, Martin and Baumberg, J.J. and Martin, R.W. and Watson, I.M. (2010) High reflectivity GaN/Air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AllnN layers. Semiconductor Science and Technology, 25 (3). ISSN 0268-1242

Xiong, C. and Rizzi, F. and Bejtka, K. and Edwards, P. R. and Gu, E. and Dawson, M. D. and Martin, R. W. and Watson, I. M. (2010) Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off. Superlattices and Microstructures, 47 (1). pp. 129-133.

Liu, Chaowang and Satka, Alexander and Jagadamma, L.K. and Edwards, P.R. and Allsopp, D. and Martin, R.W. and Shields, Philip and Kovac, Jaroslav and Uherek, Frantisek and Wang, Wang (2009) Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. Applied Physics Express, 2. p. 121002. ISSN 1882-0778

Yu, K.M. and Novikov, S.V. and Broesler, R. and Demchenko, I.N. and Luckert, F. and Martin, R.W. and Denlinger, J.D. and Liliental-Weber, Z. and Walukiewicz, W. and Foxon, C.T. (2009) Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range. Journal of Applied Physics, 106 (10). p. 103709. ISSN 0021-8979

Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and Matias, V. and Vantomme, A. and Lorenz, K. and Alves, E. and Watson, I.M. (2009) Optical and structural properties of Eu-implanted InxAl1−xN. Journal of Applied Physics, 106 (8). ISSN 0021-8979

Wang, K. and O'Donnell, K.P. and Hourahine, B. and Martin, R.W. and Watson, I.M. and Lorenz, K. and Alves, E. (2009) Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range. Physical Review B, 80 (12). ISSN 1098-0121

Lorenz, K. and Barradas, N.P. and Alves, E. and Roqan, I.S. and Nogales, E. and Martin, R.W. and O'Donnell, K.P. and Gloux, F. and Ruterana, P. (2009) Structural and optical characterization of Eu-implanted GaN. Journal of Physics D: Applied Physics, 42 (16). ISSN 0022-3727

Wu, M. and Gu, E. and Zarowna, A. and Kanibolotsky, A.L. and Kuehne, A.J.C. and Mackintosh, A.R. and Edwards, P.R. and Rolinski, O.J. and Skabara, P.J. and Martin, R.W. and Pethrick, R.A. and Birch, D.J.S. and Dawson, M.D. (2009) Star-shaped oligofluorene nanostructured blend materials : controlled micro-patterning and physical characteristics. Applied Physics A: Materials Science and Processing, 97 (1). pp. 119-123. ISSN 0947-8396

Lorenz, K. and Roqan, I.S. and Franco, N. and O'Donnell, K.P. and Darakchieva, V. and Alves, E. and Trager-Cowan, C. and Martin, R.W. and As, D.J. and Panfilova, M., Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder), HOYA Corporation (Funder), German Science Foundation (DFG) (Funder) (2009) Europium doping of zincblende GaN by ion implantation. Journal of Applied Physics, 105 (11). ISSN 0021-8979

Edwards, Paul and Martin, R.W. and Bejtka, K. and O'Donnell, K.P. and Fernandez-Garrido, S. and Calleja, E. (2009) Correlating composition and luminescence in AlInGaN epilayers. Superlattices and Microstructures, 45 (4-5). pp. 151-155.

Mudryi, A.V. and Karotki, A.V. and Yakushev, M.V. and Martin, R.W. (2009) Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods. Journal of Applied Spectroscopy, 76 (2). pp. 215-219. ISSN 0021-9037

Yakushev, M. V. and Martin, R. W. and Babinski, A. and Mudryi, A. V. (2009) Effects of magnetic fields on free excitons in CuInSe2. Physica Status Solidi C, 6 (5). pp. 1086-1088. ISSN 1862-6351

Apperson, Kathleen and Karolin, Jan and Martin, Robert W. and Birch, David J.S. (2009) Nanoparticle metrology standards based on the time-resolved fluorescence anisotropy of silica colloids. Measurement Science and Technology, 20 (2). ISSN 0957-0233

Yakushev, M.V. and Martin, R.W. and Mudryi, A.V. (2009) Diamagnetic shifts of free excitons in cuins2 in magnetic fields. Applied Physics Letters, 94 (4). 042109 -042109. ISSN 0003-6951

Yakushev, M. V. and Martin, R. W. and Mudryi, A. V. (2009) Temperature dependence of excitonic emission in CuInSe2. Physica Status Solidi C, 6 (5). pp. 1082-1085. ISSN 1610-1642

Bejtka, K. and Edwards, P.R. and Martin, R.W. and Fernandez-Garrido, S. and Calleja, E. (2008) Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 104 (7). ISSN 0021-8979

Cusco, R. and Pastor, D. and Hernandez, S. and Artus, L. and Martinez, O. and Jimenez, J. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2008) Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers. Semiconductor Science and Technology, 23 (10). 105002-1-105002-4. ISSN 0268-1242

Lorenz, K. and Franco, N. and Alves, E. and Pereira, S. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2008) Relaxation of compressively strained AlInN on GaN. Journal of Crystal Growth, 310 (18). pp. 4058-4064. ISSN 0022-0248

Thompson, D.G. and Stokes, R.J. and Martin, R.W. and Lundahl, R.J. and Faulds, K. and Graham, D. (2008) Synthesis of unique nanostructures with novel optical properties using oligonucleotide mixed-metal nanoparticle conjugates. Small, 4 (8). pp. 1054-1057. ISSN 1613-6810

Bejtka, K. and Reveret, F. and Martin, R.W. and Edwards, Paul and Vasson, A. and Leymarie, J. and Sellers, I.R. and Duboz, J.Y. (2008) Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities. Applied Physics Letters, 92 (24). ISSN 0003-6951

Watson, I.M. and Xiong, C. and Gu, E. and Dawson, M.D. and Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. (2008) Selective wet etching of AlInN layers for nitride-based MEMS and photonic device structures. Proceedings of SPIE the International Society for Optical Engineering, 6993. ISSN 0277-786X

Wang, K. and Martin, R. W. and Amabile, D. and Edwards, P. R. and Hernandez, S. and Nogales, E. and O'Donnell, K. P. and Lorenz, K. and Alves, E. and Matias, V. and Vantomme, A. and Wolverson, D. and Watson, I. M. (2008) Optical energies of AllnN epilayers. Journal of Applied Physics, 103 (7). ISSN 0021-8979

Bejtka, K. and Edwards, P.R. and Martin, R.W. and Reveret, F. and Vasson, A. and Leymarie, J. and Sellers, I.R. and Leroux, M. (2008) Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities. Semiconductor Science and Technology, 23 (4). ISSN 0268-1242

Yakushev, M.V. and Martin, R.W. and Mudryi, A.V. and Ivaniukovich, A.V. (2008) Excited states of the A free exciton in CuInS2. Applied Physics Letters, 92 (11). ISSN 0003-6951

Coquillat, D. and Le Vassor D'Yerville, M. and Kazan, M. and Liu, C. and Watson, I.M. and Edwards, P.R. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2008) Studies of the photonic and optical-frequency phonon properties of selectively grown GaN micro-pyramids. Journal of Applied Physics, 103 (4). 004910-004910. ISSN 0021-8979

Lorenz, K. and Alves, E. and Roqan, I.S. and Martin, R.W. and Trager-Cowan, C. and O'Donnell, K.P. and Watson, I.M. (2008) Rare earth doping of III-nitride alloys by ion implantation. Physica Status Solidi A, 205 (1). pp. 34-37. ISSN 1862-6300

Tan, L.-T. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. and Wu, Z.H. and Ponce, F.A. (2008) Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates. Applied Physics Letters, 92 (3). ISSN 0003-6951

Roqan, I.S. and O'Donnell, K.P. and Trager-Cowan, C. and Hourahine, B. and Martin, R.W. and Lorenz, K. and Alves, E. and As, D.J. and Panfilova, M. and Watson, I.M. (2008) Luminescence spectroscopy of Eu-implanted zincblende GaN. Physica Status Solidi B, 245 (1). pp. 170-173. ISSN 0370-1972

Mudryi, A.V. and Ivanyukovich, A.V. and Yakushev, M.V. and Martin, Robert and Saad, A. (2008) Optical spectroscopy of free excitons in a cuins2 chalcopyrite semiconductor compound. Semiconductors, 42 (1). pp. 29-33. ISSN 1063-7826

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer. Superlattices and Microstructures, 41 (5-6). p. 414.

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Kang, X.N. and Zhang, G.Y. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. Applied Physics Letters, 90 (11). ISSN 0003-6951

Lohstroh, A. and Sellin, P. J. and Wang, S. G. and Davies, A. W. and Parkin, J. and Martin, R. W. and Edwards, P. R. (2007) Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond. Applied Physics Letters, 90 (10). ISSN 0003-6951

Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. and Watson, I.M. (2007) Selective wet etching of lattice-matched AlInN-GaN heterostructures. Journal of Crystal Growth, 300 (1). pp. 254-258. ISSN 0022-0248

Edwards, Paul R. and Martin, Robert W. and Lee, Martin R. (2007) Combined cathodoluminescence hyperspectral imaging and wavelength dispersive X-ray analysis of minerals. American Mineralogist, 92 (2-3). pp. 235-242. ISSN 0003-004X

Lee, Martin R. and Parsons, Ian and Edwards, Paul R. and Martin, Robert W. (2007) Identification of cathodoluminescence activators in zoned alkali feldspars by hyperspectral imaging and electron-probe microanalysis. American Mineralogist, 92 (2-3). pp. 243-253. ISSN 0003-004X

Rizzi, F. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Dry etching of n-face GaN using two high-density plasma etch techniques. Physica Status Solidi C, 4 (1). pp. 200-2003. ISSN 1862-6351

Kachkanov, V. and O'Donnell, K. P. and Pereira, S. and Martin, R. W. (2007) Localization of excitation in InGaN epilayers. Philosophical Magazine, 87 (13). pp. 1999-2017. ISSN 1478-6435

Coquillat, D. and Le Vassor D'Yerville, M. and Boubang, T.S.A. and Liu, C. and Bejtka, K. and Watson, I.M. and Edwards, P.R. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2007) Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids. Physica Status Solidi C, 4. pp. 95-99. ISSN 1862-6351

Rizzi, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. and Kang, X.N. and Zhang, G.Y. (2007) Thinning of N-face GaN (000-1) samples by inductively coupled plasma etching and chemomechanical polishing. Journal of Vacuum Science and Technology A, 25 (2). pp. 252-260. ISSN 0734-2101

Roqan, I. S. and Lorenz, K. and O'Donnell, K. P. and Trager-Cowan, C. and Martin, R. W. and Watson, I. M. and Alves, E. (2006) Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN. Superlattices and Microstructures, 40 (4-6). pp. 445-451. ISSN 0749-6036

Bejtka, K. and Martin, R.W. and Watson, I.M. and Ndiaye, S. and Leroux, M. (2006) Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer. Applied Physics Letters, 89 (191912). pp. 191912-1. ISSN 0003-6951

Pastor, D. and Hernandez, S. and Cusco, R. and Artus, L. and Martin, R. W. and O'Donnell, K. P. and Briot, O. and Lorenz, K. and Alves, E. (2006) UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers. Superlattices and Microstructures, 40 (4-6). pp. 440-444. ISSN 0749-6036

Kachkanov, V. and O'Donnell, K. P. and Martin, R. W. and Mosselmans, J. F. W. and Pereira, S. (2006) Local structure of luminescent InGaN alloys. Applied Physics Letters, 89 (10). ISSN 0003-6951

Tan, L.T. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2006) Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness. Applied Physics Letters, 89 (10). ISSN 0003-6951

England, Jennifer and Cusack, Maggie and Paterson, Niall W. and Edwards, Paul and Lee, Martin R. and Martin, Robert (2006) Hyperspectral cathodoluminescence imaging of modern and fossil carbonate shells. Journal of Geophysical Research Atmospheres, 111. ISSN 2169-897X

Yakovlev, E.V. and Talalaev, R.A. and Martin, R.W. and Peng, N. and Jeynes, C. and Deatcher, C.J. and Watson, I.M. (2006) Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor. Physica Status Solidi C, 3 (6). pp. 1620-1623. ISSN 1862-6351

Katchkanov, V and Mosselmans, J F W and O'Donnell, K P and Nogales, E and Hernandez, S and Martin, R W and Steckl, A and Lee, D S (2006) Extended X-ray absorption fine structure studies of GaN epilayers doped with Er. Optical Materials, 28 (6-7). pp. 785-789.

Lorenz, K. and Wahl, U. and Alves, E. and Nogales, E and Dalmasso, S and Martin, R W and O'Donnell, K P and Wojdak, M and Braud, A and Monteiro, T and Wojtowicz, T and Ruterana, P and Ruffenach, S and Briot, O (2006) High temperature annealing of rare earth implanted GaN films : structural and optical properties. Optical Materials, 28 (6-7). pp. 750-758.

Hernandez, S and Cusco, R and Artus, L and Nogales, E and Martin, R W and O'Donnell, K P and Halambalakis, G and Briot, O and Lorenz, K and Alves, E (2006) Lattice order in thulium-doped GaN epilayers : in situ doping versus ion implantation. Optical Materials, 28 (6-7). pp. 771-774.

Wang, K and Martin, RW and Nogales, E and Katchkanov, V and O'Donnell, KP and Hernandez, S and Lorenz, K and Alves, E and Ruffenach, S and Briot, O (2006) Optical properties of high-temperature annealed Eu-implanted GaN. Optical Materials, 28 (6-7). pp. 797-801.

Nogales, E. and Martin, R.W. and O'Donnell, K.P. and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2006) Failure mechanism of AlN nanocaps used to protect RE-implanted GaN during high temperature annealing. Applied Physics Letters, 88. p. 31902. ISSN 0003-6951

Lorenz, K. and Franco, N. and Alves, E. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2006) Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state. Physical Review Letters, 97. 085501. ISSN 0031-9007

Wang, K. and Martin, R.W. and Nogales, E. and Edwards, P.R. and O'Donnell, K.P. and Lorenz, K. and Alves, E. and Watson, I.M. (2006) Cathodoluminescence of rare earth implanted AlInN. Applied Physics Letters, 89 (13). ISSN 0003-6951

Park, S. and Liu, C. and Gu, E. and Dawson, M.D. and Watson, I.M. and Bejtka, K. and Edwards, P.R. and Martin, R.W. (2006) Membrane structures containing InGaN/GaN quantum wells, fabricated by wet etching of sacrificial silicon substrates. Physica Status Solidi C, 3 (6). pp. 1949-1952. ISSN 1610-1642

Gu, E. and Howard, H. and Conneely, A. and O'Connor, G.M. and Illy, E.K. and Knowles, M.R.H. and Edwards, P.R. and Martin, R.W. and Watson, I.M. and Dawson, M.D. (2006) Microfabrication in free-standing gallium nitride using UV laser micromachining. Applied Surface Science, 252 (13). pp. 4897-4901. ISSN 0169-4332

Jarjour, A.F. and Green, A.M. and Parker, T.J. and Taylor, R.A. and Oliver, R.A. and Briggs, G.A.D. and Kappers, M.J. and Humphreys, C.J. and Martin, R.W. and Watson, I.M. (2006) Two-photon absorption from single InGaN/GaN quantum dots. Physica E: Low-dimensional Systems and Nanostructures, 32 (1-2). pp. 119-122.

Rizzi, F. and Edwards, P.R. and Watson, I.M. and Martin, R.W. (2006) Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface. Superlattices and Microstructures, 40 (4-6). pp. 369-372.

Gremenok, VF and Zaretskaya, EP and Zalesski, VB and Bente, K and Schmitz, W and Martin, RW and Moller, H (2005) Preparation of Cu(In,Ga)Se-2 thin film solar cells by two-stage selenization processes using N-2 gas. Solar Energy Materials and Solar Cells, 89 (2-3). pp. 129-137. ISSN 0927-0248

Jarjour, A.F. and Taylor, R.A. and Martin, R.W. and Watson, I.M. (2005) Two-photon absorption in site-controlled InGaN/GaN quantum dots. Physica Status Solidi C, 2 (11). pp. 3843-3846. ISSN 1862-6351

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. and Sellers, I.R. and Semond, F. (2005) Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities. Physica Status Solidi A: Applications and Materials Science, 202 (14). pp. 2648-2652.

Lorenz, K. and Wahl, U. and Alves, E. and Dalmasso, S. and Martin, R.W. and O'Donnell, K.P. and Ruffenach, S. and Briot, O. (2005) High temperature annealing and optical activation of Eu implanted GaN. Applied Physics Letters, 85 (14). pp. 2712-2714. ISSN 0003-6951

Wang, K. and Martin, R.W. and O'Donnell, K.P. and Katchkanov, V. and Nogales, E. and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2005) Selectively excited photoluminescence from Eu- implanted GaN. Applied Physics Letters, 87 (11). ISSN 0003-6951

Palai, R and Romans, EJ and Martin, RW and Docherty, FT and Pegrum, CM (2005) Growth mechanism, microstructure, EPMA and Raman studies of pulsed laser deposited Nd1-xBa2+xCu3O7-delta thin films. Physica C: Superconductivity and its Applications, 424 (1-2). pp. 57-71. ISSN 0921-4534

Katchkanov, V and O'Donnell, KP and Dalmasso, S and Martin, RW and Braud, A and Nakanishi, Y and Wakahara, A and Yoshida, A (2005) Photoluminescence studies of Eu-implanted GaN epilayers. Physica Status Solidi B, 242 (7). pp. 1491-1496. ISSN 0370-1972

Lee, MR and Martin, RW and Edwards, PR and Parsons, I (2005) Hyperspectral cathodoluminescence mapping of calcite and feldspar. Geochimica et Cosmochimica Acta, 69 (10, Su). A593. ISSN 0016-7037

Zhao, LX and Campion, RP and Fewster, PF and Martin, RW and Ber, BY and Kovarsky, AP and Staddon, CR and Wang, KY and Edmonds, KW and Foxon, CT and Gallagher, BL (2005) Determination of the Mn concentration in GaMnAs. Semiconductor Science and Technology, 20 (5). pp. 369-373. ISSN 0268-1242

Edwards, PR and Martin, RW and Lee, MR (2005) Simultaneous cathodoluminescence hyperspectral imaging and X-ray microanalysis. Geochimica et Cosmochimica Acta, 69 (10, Su). A591. ISSN 0016-7037

Lee, M R and Martin, R W and Trager-Cowan, C and Edwards, P R (2005) Imaging of cathodoluminescence zoning in calcite by scanning electron microscopy and hyperspectral mapping. Journal of Sedimentary Research Section A: Sedimentary Petrology and Processes, 75 (2). pp. 313-322. ISSN 1073-130X

Martin, R.W. and Edwards, P.R. and Taylor, R.A. and Rice, J.H. and Na, J.H. and Robinson, J.W. and Smith, J.D. and Liu, C. and Watson, I.M. (2005) Luminescence properties of isolated InGaN/GaN quantum dots. Physica Status Solidi A - Applications and Materials Science, 202 (3). pp. 372-376.

Palai, R and Romans, EJ and Martin, RW and Docherty, FT and Maas, P and Pegrum, CM (2005) Studies of growth, microstructure, IMP Raman spectroscopy and annealing effect of pulsed laser deposited Ca-doped NBCO thin films. Journal of Physics D: Applied Physics, 38 (1). pp. 51-61. ISSN 0022-3727

Coquillat, D. and Torres, J. and dYerville, M.L.V. and Legros, R. and Lascaray, J.P. and Liu, C. and Watson, I.M. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2005) Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure. Physica Status Solidi A, 202 (4). pp. 652-655. ISSN 1862-6300

Katchkanov, V. and O'Donnell, K.P. and Mosselmans, J.F.W. and Hernandez, S. and Martin, R.W. and Nanishi, Y. and kurochi, M. and Watson, I.M. and van der Stricht, W. and Calleja, E. (2005) Extended x-ray absorption fine structure studies of InGaN epilayers. MRS Online Proceedings Library, 831. pp. 203-207. ISSN 0272-9172

Choi, H.W. and Jeon, C.W. and Liu, C. and Watson, I.M. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. and Tripathy, S. and Chua, S.J. (2005) InGaN nano-ring structures for high-efficiency light emitting diodes. Applied Physics Letters, 86 (2). ISSN 0003-6951

Hernandez, S. and Cusco, R. and Pastor, D. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Calleja, E. (2005) Raman-scattering study of the InGaN alloy over the whole composition range. Journal of Applied Physics, 98. 013511-03515. ISSN 0021-8979

Hernandez, S. and Wang, K. and Amabile, D. and Nogales, E. and Cusco, R. and Pastor, D. and Artus, L. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2005) Structural and optical properties of MOCVD AllnN epilayers. MRS Online Proceedings Library, 388-393 (6). pp. 388-393. ISSN 0272-9172

Watson, I.M. and Liu, C. and Gu, E. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2005) Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates. Applied Physics Letters, 87. ISSN 0003-6951

Deatcher, C.J. and Bejtka, K. and Martin, R.W. and Romani, S. and Kheyrandish, H. and Smith, L.M. and Rushworth, S.A. and Liu, C. and Cheong, M.G. and Watson, I.M. (2005) Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films. Semiconductor Science and Technology, 21 (9). pp. 1287-1295.

O'Donnell, K.P. and Katchkanov, V. and Wang, K. and Martin, R.W. and Hourahine, B. and Edwards, P.R. and Nogales, E. and Mosselmans, J.F.W. and De-Vries, B. (2004) Site multiplicity of rare earth ions in III-nitrides. MRS Online Proceedings Library, 831. pp. 527-535. ISSN 0272-9172

Edwards, P.R. and Martin, R.W. and Watson, I.M. and Liu, C. and Taylor, R.A. and Rice, J.H. and Na, J.H. and Robinson, J.W. and Smith, J.D. (2004) Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays. Applied Physics Letters, 85 (19). pp. 4281-4283. ISSN 0003-6951

Pecharroman-Gallego, R and Martin, R W and Watson, I M (2004) Investigation of the unusual temperature dependence of ingan/gan quantum well photoluminescence over a range of emission energies. Journal of Physics D: Applied Physics, 37 (21). pp. 2954-2961. ISSN 0022-3727

O'Donnell, K P and Fernandez-Torrente, I and Edwards, P R and Martin, R W (2004) The composition dependence of the InxGa1-xN bandgap. Journal of Crystal Growth, 269 (1). pp. 100-105. ISSN 0022-0248

Choi, H.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2004) High extraction efficiency InGaN micro-ring light emitting diodes. Applied Physics Letters, 83 (22). pp. 4483-4485. ISSN 0003-6951

Martin, R.W. and Edwards, P.R. and O'Donnell, K.P. and Dawson, M.D. and Jeon, C.W. and Liu, C. and Rice, G.R. and Watson, I.M. (2004) Cathodoluminescence spectral mapping of III-nitride structures. Physica Status Solidi A - Applications and Materials Science, 201 (4). pp. 665-672.

Martin, R W and Edwards, P R and Liu, C and Deatcher, C J and Chong, H M H and De La Rue, R M and Watson, I M (2004) Cathodoluminescence spectral mapping of selectively grown III-nitride structures. Institute of Physics Conference Series, 179. pp. 135-138. ISSN 0951-3248

Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2004) Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers. MRS Online Proceedings Library, 831. ISSN 0272-9172

Choi, H.W. and Edwards, P.R. and Liu, C. and Jeon, C.W. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Tripathy, P. and Chua, S.J. (2004) Sub-micron inGaN ring structures for high-efficiency LEDs. Physica Status Solidi C, 1 (2). pp. 202-205. ISSN 1862-6351

Edwards, P.R. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2003) Simultaneous composition mapping and hyperspectral cathodoluminescence imaging of InGaN epilayers. Physica Status Solidi C (7). pp. 2474-2477. ISSN 1862-6351

Choi, H.W. and Jeon, C.W. and Dawson, M.D. and Edwards, P.R. and Tripathy, S. and Martin, R.W. (2003) Mechanism of enhanced light output in InGaN-based microlight emitting diodes. Journal of Applied Physics, 93 (10). pp. 5978-5982. ISSN 0021-8979

Choi, H.W. and Jeon, C.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2003) Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technology Letters, 15 (4). pp. 510-512. ISSN 1041-1135

O'Donnell, K P and Pereira, S and Martin, R W and Edwards, P R and Tobin, M J and Mosselmans, J F W (2003) Wishful physics: Some common misconceptions about InGaN. Physica Status Solidi A - Applications and Materials Science, 195 (3). pp. 532-536.

Dalmasso, S and Martin, R W and Edwards, P R and O'Donnell, K P and Pipeleers, B and Vantomme, A and Nakanishi, Y and Wakahara, A and Yoshida, A, RENiBEI Network (2003) Electron probe microanalysis of rare earth doped gallium nitride light emitters. Journal of Physics: Conference Series, 180. pp. 555-558. ISSN 1742-6596

Edwards, P.R. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2003) Simultaneous composition and cathodoluminescence spectral mapping of III-nitride structures. Journal of Physics: Conference Series (180). pp. 293-296. ISSN 1742-6596

Martin, R W and O'Donnell, K P and Edwards, P R (2002) Comment on "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells" [Appl. Phys. Lett. 79, 2594 (2001)]. Applied Physics Letters, 81 (16). ISSN 0003-6951

Martin, R.W. and Edwards, P.R. and O'Donnell, K.P. and Mackay, E.G. and Watson, I.M. (2002) Microcomposition and luminescence of InGaN emitters. Physica Status Solidi A, 192 (1). pp. 117-123. ISSN 1862-6300

Martin, Robert and Kim, H.S. and Cho, Y. and Edwards, P.R. and Watson, I.M. and Sands, T. and Cheung, N.W. and Dawson, M.D. (2002) GaN microcavities formed by laser lift-off and plasma etching. Materials Science and Engineering B, 93 (1-3). pp. 98-101. ISSN 0921-5107

Pecharroman-Gallego, R. and Edwards, P.R. and Martin, R.W. and Watson, I.M. (2002) Investigations of phonon sidebands in InGaN/GaN multi-quantum well luminescence. Materials Science and Engineering B, 93 (1-3). pp. 94-97. ISSN 0921-5107

White, M.E. and O'Donnell, K.P. and Martin, R.W. and Pereira, S. and Deatcher, C.J. and Watson, I.M. (2002) Photoluminescence excitation spectroscopy of ingan epilayers. Materials Science and Engineering B, 93 (1-3). pp. 147-149. ISSN 0921-5107

Martin, R.W. and Edwards, P.R. and Pecharroman-Gallego, R. and Liu, C. and Deatcher, C.J. and Watson, I.M. and O'Donnell, K.P. (2002) Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells. Journal of Physics D: Applied Physics, 35 (7). pp. 604-608. ISSN 0022-3727

Martin, R.W. and Edwards, P.R. and Kim, H.S. and Kim, K.S. and Kim, T. and Watson, I.M. and Dawson, M.D. and Cho, Y. and Sands, T. and Cheung, N.W. (2001) Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etch-back. Applied Physics Letters, 79 (19). ISSN 0003-6951

Kim, K.S. and Edwards, P.R. and Kim, H.S. and Martin, R.W. and Watson, I.M. and Dawson, M.D. (2001) Characterisation of optical properties in micro-patterned InGaN quantum wells. Physica Status Solidi B, 228 (1). pp. 169-172. ISSN 0370-1972

Watson, I.M. and Liu, C. and Kim, K.S. and Kim, H.S. and Deatcher, C.J. and Girkin, J.M. and Dawson, M.D. and Edwards, P.R. and Trager-Cowan, C. and Martin, R.W. (2001) In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth. Physica Status Solidi A, 188 (2). pp. 743-746. ISSN 1862-6300

Edwards, P.R. and Martin, R.W. and Kim, H.S. and Kim, K.S. and Chen, Y. and Watson, I.M. and Sands, T. and Cheung, N.W. and Dawson, M.D. (2001) InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching. Physica Status Solidi B, 228 (1). pp. 91-94. ISSN 0370-1972

O'Donnell, K.P. and Mosselmans, J.F.W. and Martin, R.W. and Pereira, S. and White, M.E. (2001) Structural analysis of InGaN epilayers. Journal of Physics: Condensed Matter, 13 (32). pp. 6977-6991. ISSN 0953-8984

Kim, T. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Krauss, T.F. and Marsh, J.H. and De La Rue, R.M. (2001) Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers. Materials Science and Engineering B, 82 (1-3). pp. 245-247. ISSN 0921-5107

O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and White, M.E. (2001) The dependence of the optical energies on InGaN composition. Materials Science and Engineering B, 82 (1-3). pp. 194-196. ISSN 0921-5107

Martin, R.W. and Edwards, P.R. and Pecharroman-Gallego, R. and Trager-Cowan, C. and Kim, T. and Kim, H.S. and Kim, K.S. and Watson, I.M. and Dawson, M.D. (2001) Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities. Physica Status Solidi A, 183 (1). pp. 145-149. ISSN 1862-6300

O'Donnell, K.P. and Martin, R.W. and White, M.E. and Tobin, M.J. and Mosselmans, J.F.W. and Watson, I.M. and Damiliano, B. and Grandjean, N. (2001) Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron radiation. MRS Online Proceedings Library, 639. G9.11. ISSN 0272-9172

Book Section

O'Donnell, K. P. and Martin, R. W. and Edwards, P. R. and Lorenz, K. and Alves, E. and Bockowski, M. (2013) Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. In: The Physics of Semiconductors. AIP Conference Proceedings. ISBN 9780735411944

Martin, Robert (2010) Microscopic characterisation of luminescent III-N:RE epilayers. In: Rare Earth Doped III-Nitrides For Optoelectronic And Spintronic Applications. Topics in Applied Physics . Springer-Verlag Berlin, Berlin, pp. 189-219. ISBN 978-90-481-2876-1

Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, Robert and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2005) Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In: GaN, AIN, InN and Their Alloys. Materials research society symposium proceedings . Materials Research Society, Warrendale, pp. 179-184. ISBN 1558997792

Martin, Robert and Edwards, P.R. and Hernandez, S. and Wang, K and Fernandez-Torrente, I and Kurouchi, M. and Nanishi, Y. and O'Donnell, K.P. (2005) The composition dependence of the optical properties of InN-rich InGaN grown by MBE. In: GaN, AIN, InN and their alloys. Materials research society symposium proceedings . Materials Research Society, Warrendale, pp. 119-124. ISBN 9781558997790

Choi, H.W. and Jeon, C.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2002) Efficient GaN-based micro-LED arrays. In: Proceedings of the 2002 MRS Fall Meeting. MRS, pp. 433-438.

Conference or Workshop Item

Edwards, P. R. and Le Boulbar, E. D. and Shields, P. A. and Allsopp, D. W. E. and Martin, R. W. (2014) Cathodoluminescence hyperspectral imaging of nitride core-shell structures. In: Condensed Matter in Paris 2014 (CMD25-JMC14), 2014-08-24 - 2014-08-29.

Massoubre, D. and Edwards, P. R. and Xie, E. and Richardson, E. and Watson, I. M. and Gu, E. and Martin, R. W. and Dawson, M. D. (2012) Individually-addressed planar nanoscale InGaN-based light emitters. In: 2012 IEEE Photonics Conference (IPC), 2012-09-23 - 2012-09-27.

Edwards, Paul and Krishnan Jagadamma, Lethy and Martin, Robert and Wark, Alastair (2011) Cathodoluminescence hyperspectral imaging on the nanometre scale. In: HSI 2011, 2011-05-17 - 2011-05-18. (Unpublished)

Luckert, F. and Yakushev, M. V. and Mudryi, A. V. and Martin, R. W. (2010) Excitons in chalcopyrite solar cell materials: CUINSE2 and CUINS2. In: 11th International Conference on Optics of Excitons in Confined Systems, 2009-09-07 - 2009-09-11.

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27. (Unpublished)

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Watson, I.M. and Edwards, P.R. and Martin, R.W. (2006) Processing of n-face GaN for microcavity applications. In: The E-MRS 2006 Spring Meeting, 2006-05-29 - 2006-06-02. (Unpublished)

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. and Kang, X.N. and Zhang, G.Y. (2006) Processing of n-face GaN for surface-emitting laser fabrication. In: 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), 2006-05-15 - 2006-05-19. (Unpublished)

Hernandez, S. and Wang, K. and Amabile, D. and Nogales, E. and Pastor, D. and Cusco, R. and Artus, L. and Martin, R. W. and O'Donnell, K. P. and Watson, I. M. and Network, RENiBE1 (2006) Structural and optical properties of MOCVD InAlN epilayers. In: Symposium on GaN, AIN, InN Related Materials, 2005-11-28 - 2005-12-02.

Gu, E. and Howard, H. and Conneely, A. and O'Connor, G.M. and Edwards, P.R. and Martin, R.W. and Dawson, M.D. (2005) Microfabrication of free-standing gallium nitride using UV laser micromachining. In: European Materials Research Society 2005 Spring Meeting, 2005-05-31 - 2005-06-03. (Unpublished)

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06.

Edwards, P.R. and Martin, R.W. and Choi, H.W. and Dawson, M.D. (2004) Hyper-spectral cathodoluminescence imaging of blue light-emitting micro-devices. In: 5th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED 2004), 2004-03-16 - 2004-03-19.

Gu, E. and Choi, H.W. and Jeon, C.W. and Rice, G.B. and Liu, C. and Watson, I.M. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2003) Microstructure fabrication in gallium nitride, silicon carbide and diamond. In: Wide Bandgap Semiconductor Technology: Institute of Physics Day Meeting, 2003-09-17. (Unpublished)

Watson, I.M. and Kim, K.S. and Kim, H.S. and Liu, C. and Deatcher, C.J. and Girkin, J.M. and Dawson, M.D. and Edwards, P.R. and Trager-Cowan, C. and Martin, R.W. (2001) In-situ reflectometry based studies of lateral epitaxial overgrowth. In: UK Nitrides Consortium Meeting, 2001-09-01. (Unpublished)

This list was generated on Mon Sep 25 05:37:41 2017 BST.