High extraction efficiency ingan micro-ring light emitting diodes

Choi, H.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2003) High extraction efficiency ingan micro-ring light emitting diodes. Applied Physics Letters, 83 (22). pp. 4483-4485. ISSN 0003-6951 (https://doi.org/10.1063/1.1630352)

[thumbnail of Choi-etal-api2003-high-extraction-efficiency-ingan-micro-ring-led]
Text. Filename: Choi_etal_api2003_high_extraction_efficiency_ingan_micro_ring_led.pdf
Accepted Author Manuscript

Download (428kB)| Preview


Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.