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Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Liu, Chaowang and Satka, Alexander and Jagadamma, L.K. and Edwards, P.R. and Allsopp, D. and Martin, R.W. and Shields, Philip and Kovac, Jaroslav and Uherek, Frantisek and Wang, Wang (2009) Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. Applied Physics Express, 2. p. 121002. ISSN 1882-0778

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InxGa1-xN/GaN quantum wells have been grown on the {1011} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips.