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2015

Krokhin, A. and Neogi, A. and Llopis, A. and Mahat, M. and Gumen, L. and Pereira, S. and Watson, I. (2015) Electrostatic enhancement of light emitted by semiconductor quantum well. Journal of Physics: Conference Series, 647 (1). 012014. ISSN 1742-6588

2013

Llopis, Antonio and Lin, J. and Pereira, Sergio Manuel De Sousa and Trindade, Tito and Martins, M.A. and Watson, Ian and Krokhin, Alexi and Neogi, Arup (2013) Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells. Physical Review B: Condensed Matter and Materials Physics, 87 (20). 201304(R). ISSN 1098-0121

Kachkanov, V. and Dobnya, Igor and O'Donnell, Kevin and Lorenz, Katharina and Pereira, Sergio Manuel De Sousa and Watson, Ian and Sadler, Thomas and Li, Haoning and Zubialevich, Vitaly and Parbrook, Peter (2013) Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping. Physica Status Solidi C, 10 (3). pp. 481-485. ISSN 1610-1642

2012

Mahat, Meg and Llopis, Antonio and Schaller, Richard and Watson, Ian and Pereira, Sergio Manuel De Sousa and Neogi, Arup (2012) Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits. MRS Communications, 2 (2). pp. 55-60.

Kachkanov, V. and Dolbnya, I. P. and O'Donnell, K. P. and Lorenz, K. and Pereira, S. and Martin, R. W. and Edwards, P. R. and Watson, I. M. (2012) Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping. MRS Online Proceedings Library, 1396. mrsf11-1396-o06-11.

2010

Girao, A.Z. and Martins, M.A. and Pereira, S. and Trindade, T. and Zhachuk, R. and Kazan, M. and Watson, I.M. (2010) Noble metal nanocrystals at the surface of nitride semiconductors: synthesis, deposition and surface characterisation. Journal of Nanoscience and Nanotechnology, 10. pp. 2574-2577. ISSN 1533-4880

2008

Lorenz, K. and Franco, N. and Alves, E. and Pereira, S. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2008) Relaxation of compressively strained AlInN on GaN. Journal of Crystal Growth, 310 (18). pp. 4058-4064. ISSN 0022-0248

Belton, C.R. and Itskos, G. and Heliotis, G. and Stavrinou, P.N. and Lagoudakis, P.G. and Lupton, J. and Pereira, S. and Gu, E. and Griffin, C. and Guilhabert, B.J.E. and Watson, I.M. and Mackintosh, A.R. and Pethrick, R.A. and Feldmann, J. and Murray, R. and Dawson, M.D. and Bradley, D.D.C. (2008) New light from hybrid inorganic-organic emitters. Journal of Physics D: Applied Physics, 41 (9). 094006. ISSN 1361-6463

Barradas, N.P. and Alves, E. and Pereira, S. and Watson, I.M. (2008) RBS analysis of InaGaN/GaN quantum wells for hybrid structures with efficient Forster coupling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 288 (8). pp. 1402-1406. ISSN 0168-583X

Pereira, Sergio Manuel de Sousa and Martins, Manuel Antonio and Trindade, Tito and Watson, Ian M. and Zhu, Diane and Humphreys, Colin J. (2008) Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures. Advanced Materials, 20 (5). pp. 1038-1043. ISSN 1521-4095

2007

Itskos, G. and Heliotis, G. and Lagoudakis, P.G. and Lupton, J. and Barradas, N.P. and Alves, E. and Pereira, S.M.D.S. and Watson, I.M. and Dawson, M.D. and Feldmann, J. and Murray, R. and Bradley, D.D.C. (2007) Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures. Physical Review B, 76 (3). 035344. ISSN 1098-0121

de Sousa Pereira, Sergio Manuel and O'Donnell, Kevin Peter and da Costa Alves, Eduardo Jorge (2007) Role of nanoscale strain inhomogeneity on the light emission from InGaN epilayers. Advanced Functional Materials, 17 (1). pp. 37-42. ISSN 1616-301X

Kachkanov, V. and O'Donnell, K. P. and Pereira, S. and Martin, R. W. (2007) Localization of excitation in InGaN epilayers. Philosophical Magazine, 87 (13). pp. 1999-2017. ISSN 1478-6435

2006

Kachkanov, V. and O'Donnell, K. P. and Martin, R. W. and Mosselmans, J. F. W. and Pereira, S. (2006) Local structure of luminescent InGaN alloys. Applied Physics Letters, 89 (10). 101908. ISSN 0003-6951

2004

Correia, M.R. and Pereira, S.M.D.S. and Ferreira Pereira Lopes, E.M. and Frandon, J. and Watson, I.M. and Liu, C. and Alves, E. and Sequeira, A.D. and Franco, N. (2004) Direct evidence for strain inhomogeneity in inxGa1-xN epilayers by raman spectroscopy. Applied Physics Letters, 85 (12). pp. 2235-2237. ISSN 0003-6951

Correia, M.R. and Pereira, S.M.D.S. and Ferreira Pereira Lopes, E.M. and Ferreira, R.A.S. and Frandon, J. and Alves, E. and Watson, I.M. and Liu, C. and Morel, A. and Gil, B. (2004) Optical studies on the red luminescence of InGaN epilayers. Superlattices and Microstructures, 36 (4-6). pp. 625-632.

Barradas, N.P. and Alves, E. and Pereira, S.M.D.S. and Shvartsman, V.V. and Kholkin, A.L. and Ferreira Pereira Lopes, E.M. and O'Donnell, K.P. and Liu, C. and Deatcher, C.J. and Watson, I.M. and Mayer, M. (2004) Roughness in gaN/InGaN films and multilayers determined with Rutherford backscattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 217 (3). pp. 479-497. ISSN 0168-583X

2003

Deatcher, C.J. and Liu, C. and Pereira, S.M.D.S. and Lada, M. and Cullis, A.G. and Sung, Y.J. and Brandt, O. and Watson, I.M. (2003) In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures. Semiconductor Science and Technology, 18 (4). pp. 212-218. ISSN 0268-1242

O'Donnell, K P and Pereira, S and Martin, R W and Edwards, P R and Tobin, M J and Mosselmans, J F W (2003) Wishful physics: Some common misconceptions about InGaN. Physica Status Solidi A - Applications and Materials Science, 195 (3). pp. 532-536.

2002

PEREIRA, SERGIO MANUEL DE SOUSA and Correia, M.R. and Pereira, Eduarda and Trager-Cowan, Carol and Sweeney, Francis and O'Donnell, Kevin and Alves, E. and Franco, N. and Sequeira, A.D. (2002) Structural and optical properties of InGaN/GaN layers close to the critical layer thickness. Applied Physics Letters, 81 (7). p. 1207.

White, M.E. and O'Donnell, K.P. and Martin, R.W. and Pereira, S. and Deatcher, C.J. and Watson, I.M. (2002) Photoluminescence excitation spectroscopy of ingan epilayers. Materials Science and Engineering B, 93 (1-3). pp. 147-149. ISSN 0921-5107

Pereira, S. and Correia, M.R. and Pereira, E. and O'Donnell, K.P. and Alves, E. and Sequeira, A.D. and Franco, N. and Watson, I.M. and Deatcher, C.J. (2002) Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping. Applied Physics Letters, 80 (21). pp. 3913-3915. ISSN 0003-6951

Pereira, S.M.D.S. and Correia, M.R. and Pereira, E. and O'Donnell, K.P. and Alves, E. and Barradas, N.P. and Sequeira, A.D. and Watson, I.M. and Liu, C. (2002) Degradation of structural and optical properties of InGaN/GaN multiple quantum wells. Journal of Applied Physics, 105. pp. 302-306. 063105. ISSN 0021-8979

Pereira, S.M.D.S. and Ferreira Pereira Lopes, E.M. and Alves, E. and Barradas, N.P. and O'Donnell, K.P. and Liu, C. and Deatcher, C.J. and Watson, I.M. (2002) Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing. Applied Physics Letters, 81 (16). pp. 2950-2952. ISSN 0003-6951

2001

Pereira, S.M.D.S. and Correia, M.R. and Ferreira Pereira Lopes, E.M. and O'Donnell, K.P. and Trager-Cowan, C. and Sweeney, F. and Alves, E. and Sequeira, A.D. and Franco, N. and Watson, I.M. (2001) Depth resolved studies of indium content and strain in InGaN layers. Physica Status Solidi B, 228 (1). pp. 59-64. ISSN 0370-1972

O'Donnell, K.P. and Mosselmans, J.F.W. and Martin, R.W. and Pereira, S. and White, M.E. (2001) Structural analysis of InGaN epilayers. Journal of Physics: Condensed Matter, 13 (32). pp. 6977-6991. ISSN 0953-8984