Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits
Mahat, Meg and Llopis, Antonio and Schaller, Richard and Watson, Ian and Pereira, Sergio Manuel De Sousa and Neogi, Arup (2012) Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits. MRS Communications, 2 (2). pp. 55-60. (https://doi.org/10.1557/mrc.2012.8)
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Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.
ORCID iDs
Mahat, Meg, Llopis, Antonio, Schaller, Richard, Watson, Ian ORCID: https://orcid.org/0000-0002-8797-3993, Pereira, Sergio Manuel De Sousa and Neogi, Arup;-
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Item type: Article ID code: 46438 Dates: DateEvent15 June 2012PublishedSubjects: Science > Physics Department: Faculty of Science > Physics > Institute of Photonics
Technology and Innovation Centre > PhotonicsDepositing user: Pure Administrator Date deposited: 08 Jan 2014 11:43 Last modified: 02 Sep 2024 00:43 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/46438