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Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits

Mahat, Meg and Llopis, Antonio and Schaller, Richard and Watson, Ian and Pereira, Sergio Manuel De Sousa and Neogi, Arup (2012) Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits. MRS Communications, 2 (2). pp. 55-60.

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Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.