Picture of UK Houses of Parliament

Leading national thinking on politics, government & public policy through Open Access research

Strathprints makes available scholarly Open Access content by researchers in the School of Government & Public Policy, based within the Faculty of Humanities & Social Sciences.

Research here is 1st in Scotland for research intensity and spans a wide range of domains. The Department of Politics demonstrates expertise in understanding parties, elections and public opinion, with additional emphases on political economy, institutions and international relations. This international angle is reflected in the European Policies Research Centre (EPRC) which conducts comparative research on public policy. Meanwhile, the Centre for Energy Policy provides independent expertise on energy, working across multidisciplinary groups to shape policy for a low carbon economy.

Explore the Open Access research of the School of Government & Public Policy. Or explore all of Strathclyde's Open Access research...

Depth resolved studies of indium content and strain in InGaN layers

Pereira, S.M.D.S. and Correia, M.R. and Ferreira Pereira Lopes, E.M. and O'Donnell, K.P. and Trager-Cowan, C. and Sweeney, F. and Alves, E. and Sequeira, A.D. and Franco, N. and Watson, I.M. (2001) Depth resolved studies of indium content and strain in InGaN layers. Physica Status Solidi B, 228 (1). pp. 59-64. ISSN 0370-1972

Full text not available in this repository.Request a copy from the Strathclyde author

Abstract

A depth resolved study of optical and structural properties in wurtzite InGaN/GaN bilayers grown by MOCVD on sapphire substrates is reported. Depth resolved cathodoluminescence (CL), Rutherford backscattering spectrometry (RBS) and high resolution X-ray diffraction (HRXRD) were used to gain an insight into the composition and strain depth profiles. It is found that both quantities can vary considerably over depth. Two representative samples are discussed. The first shows a CL peak shift to the blue when the electron beam energy is increased. Such behaviour conforms to the In/Ga profile derived from RBS, where a linear decrease of the In mole fraction from the near surface (0.20) down to the near GaN/InGaN interface (0.14) region was found. The other sample discussed shows no depth variations of composition. However, the strain changes from nearly pseudomorphic, close the GaN interface, to an almost relaxed state close to the surface. This discrete variation of strain over depth, originates a double XRD and CL peak related to InGaN.