Picture of rolled up £5 note

Open Access research that shapes economic thinking...

Strathprints makes available scholarly Open Access content by the Fraser of Allander Institute (FAI), a leading independent economic research unit focused on the Scottish economy and based within the Department of Economics. The FAI focuses on research exploring economics and its role within sustainable growth policy, fiscal analysis, energy and climate change, labour market trends, inclusive growth and wellbeing.

The open content by FAI made available by Strathprints also includes an archive of over 40 years of papers and commentaries published in the Fraser of Allander Economic Commentary, formerly known as the Quarterly Economic Commentary. Founded in 1975, "the Commentary" is the leading publication on the Scottish economy and offers authoritative and independent analysis of the key issues of the day.

Explore Open Access research by FAI or the Department of Economics - or read papers from the Commentary archive [1975-2006] and [2007-2018]. Or explore all of Strathclyde's Open Access research...

Browse by Journal or other publication

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Publication Date | Item type | No Grouping
Jump to: 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2008 | 2007 | 2005 | 2003 | 1998 | 1993
Number of items: 24.

2018

Edwards, Paul R and Martin, Robert W (2018) Corrigendum : Cathodoluminescence nano-characterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005). Semiconductor Science and Technology, 33. ISSN 0268-1242

2017

Kusch, Gunnar and Mehnke, Frank and Enslin, Johannes and Edwards, Paul R and Wernicke, Tim and Kneissl, Michael and Martin, Robert W (2017) Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy. Semiconductor Science and Technology, 32 (3). ISSN 0268-1242

2016

Rajbhandari, Sujan and McKendry, Jonathan J. D. and Herrnsdorf, Johannes and Chun, Hyunchae and Faulkner, Grahame and Haas, Harald and Watson, Ian M. and O'Brien, Dominic and Dawson, Martin D. (2016) A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications. Semiconductor Science and Technology. pp. 1-49. ISSN 0268-1242 (In Press)

Yu, K M and Sarney, W L and Novikov, S V and Segercrantz, N and Ting, M and Shaw, M and Svensson, S P and Martin, R W and Walukiewicz, W and Foxon, C T (2016) Highly mismatched GaN1-xSbx alloys : synthesis, structure and electronic properties. Semiconductor Science and Technology, 31 (8). ISSN 0268-1242

Tian, Pengfei and Althumali, Ahmad and Gu, Erdan and Watson, Ian M. and Dawson, Martin D. and Liu, Ran (2016) Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2. Semiconductor Science and Technology, 31 (4). pp. 1-12. ISSN 0268-1242

2015

Santos, Joao M M and Jones, Brynmor E and Schlosser, Peter J and Watson, Scott and Herrnsdorf, Johannes and Guilhabert, Benoit and Mckendry, Jonathan and De Jesus, Joel and Garcia, Thor A and Tamargo, Maria C and Kelly, Anthony E and Hastie, Jennifer E and Laurand, Nicolas and Dawson, Martin D (2015) Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications. Semiconductor Science and Technology, 30 (3). ISSN 0268-1242

2014

Campbell, S and Ackemann, T and Fraser, H and Missous, M (2014) On the thermal dependence of the generation of terahertz radiation by photomixing. Semiconductor Science and Technology, 29 (3). ISSN 0268-1242

2013

Massoubre, David and Xie, Enyuan and Guilhabert, Benoit Jack Eloi and Herrnsdorf, Johannes and Gu, Erdan and Watson, Ian and Dawson, Martin (2013) Micro-structured light emission from planar InGaN light-emitting diodes. Semiconductor Science and Technology, 29 (1). ISSN 0268-1242

Taylor, E and Fang, F and Oehler, F and Edwards, P R and Kappers, M J and Lorenz, K and Alves, E and McAleese, C and Humphreys, C J and Martin, R W (2013) Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates. Semiconductor Science and Technology, 28 (6).

2012

Tsiminis, Georgios and Montgomery, Neil A. and Kanibolotsky, Alexander L. and Ruseckas, Arvydas and Perepichka, Igor F. and Skabara, Peter J. and Turnbull, Graham A. and Samuel, Ifor D. W. (2012) Laser characteristics of a family of benzene-cored star-shaped oligofluorenes. Semiconductor Science and Technology, 27 (9). ISSN 0268-1242

Lethy, K J and Edwards, P R and Liu, C and Shields, P A and Allsopp, D W E and Martin, R W (2012) Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE. Semiconductor Science and Technology, 27 (8).

Gong, Zheng and Liu, N.Y. and Tao, Y.B. and Massoubre, David and Xie, E.Y and Hu, X.D. and Chen, Z.Z. and Zhang, G.Y. and Pan, Y.B. and Hao, M.S. and Watson, Ian and Gu, Erdan and Dawson, Martin (2012) Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes. Semiconductor Science and Technology, 27 (1). ISSN 0268-1242

2011

Edwards, Paul R and Martin, Robert W (2011) Cathodoluminescence nano-characterization of semiconductors. Semiconductor Science and Technology, 26 (6).

2010

Xiong, C. and Edwards, P.R. and Christmann, G. and Gu, E. and Dawson, Martin and Baumberg, J.J. and Martin, R.W. and Watson, I.M. (2010) High reflectivity GaN/Air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AllnN layers. Semiconductor Science and Technology, 25 (3). ISSN 0268-1242

2008

Cusco, R. and Pastor, D. and Hernandez, S. and Artus, L. and Martinez, O. and Jimenez, J. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2008) Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers. Semiconductor Science and Technology, 23 (10). 105002-1-105002-4. ISSN 0268-1242

Qiu, Y.N. and Sun, H.D. and Rorison, J.M. and Calvez, S. and Dawson, M.D. and Bryce, A.C. (2008) Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study. Semiconductor Science and Technology, 23 (9). ISSN 0268-1242

Bejtka, K. and Edwards, P.R. and Martin, R.W. and Reveret, F. and Vasson, A. and Leymarie, J. and Sellers, I.R. and Leroux, M. (2008) Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities. Semiconductor Science and Technology, 23 (4). ISSN 0268-1242

2007

Liu, C. and Watson, I.M. (2007) Quantitive simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire. Semiconductor Science and Technology, 22. pp. 629-635. ISSN 0268-1242

2005

Zhao, LX and Campion, RP and Fewster, PF and Martin, RW and Ber, BY and Kovarsky, AP and Staddon, CR and Wang, KY and Edmonds, KW and Foxon, CT and Gallagher, BL (2005) Determination of the Mn concentration in GaMnAs. Semiconductor Science and Technology, 20 (5). pp. 369-373. ISSN 0268-1242

Deatcher, C.J. and Bejtka, K. and Martin, R.W. and Romani, S. and Kheyrandish, H. and Smith, L.M. and Rushworth, S.A. and Liu, C. and Cheong, M.G. and Watson, I.M. (2005) Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films. Semiconductor Science and Technology, 21 (9). pp. 1287-1295.

2003

Deatcher, C.J. and Liu, C. and Pereira, S.M.D.S. and Lada, M. and Cullis, A.G. and Sung, Y.J. and Brandt, O. and Watson, I.M. (2003) In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures. Semiconductor Science and Technology, 18 (4). pp. 212-218. ISSN 0268-1242

Macaluso, R. and Robert, F. and Bryce, A.C. and Calvez, S. and Dawson, M.D. (2003) Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation. Semiconductor Science and Technology, 18 (2). L12-L15. ISSN 0268-1242

1998

Berlouis, Leonard and Wark, A. and Cruickshank, F.R. and Antoine, R. and Galletto, P. and Brevet, Pierre-Francois and Girault, H.H. and Gupta, S.C. and Chavada, F.R. and Kumar, S. and Garg, A.K. (1998) Second harmonic generation in the characterisation of surface effects in epitaxial CdxHg1-xTe (CMT) <111> layers. Semiconductor Science and Technology, 13 (10). pp. 1117-1122. ISSN 0268-1242

1993

Fisher, J.M. and Berlouis, L.E.A. and Rospendowski, B.N. and Hall, P.J. and Astles, M.G. (1993) In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride. Semiconductor Science and Technology, 8 (7). pp. 1459-1464. ISSN 0268-1242

This list was generated on Fri Jul 20 06:11:10 2018 BST.