Determination of the Mn concentration in GaMnAs

Zhao, LX and Campion, RP and Fewster, PF and Martin, RW and Ber, BY and Kovarsky, AP and Staddon, CR and Wang, KY and Edmonds, KW and Foxon, CT and Gallagher, BL (2005) Determination of the Mn concentration in GaMnAs. Semiconductor Science and Technology, 20 (5). pp. 369-373. ISSN 0268-1242

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Abstract

Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.

ORCID iDs

Zhao, LX, Campion, RP, Fewster, PF, Martin, RW ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Ber, BY, Kovarsky, AP, Staddon, CR, Wang, KY, Edmonds, KW, Foxon, CT and Gallagher, BL;
  • Item type:Article
    ID code:31060
    Dates:
    Date
    Event
    1 May 2005
    Published
    Keywords:GaMnAs, semiconductors, x-ray diffraction, Optics. Light, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:22 Jun 2011 13:42
    Last modified:20 Jan 2021 19:19
    URI:https://strathprints.strath.ac.uk/id/eprint/31060
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