Micro-structured light emission from planar InGaN light-emitting diodes

Massoubre, David and Xie, Enyuan and Guilhabert, Benoit Jack Eloi and Herrnsdorf, Johannes and Gu, Erdan and Watson, Ian and Dawson, Martin (2013) Micro-structured light emission from planar InGaN light-emitting diodes. Semiconductor Science and Technology, 29 (1). 015005. ISSN 0268-1242 (https://doi.org/10.1088/0268-1242/29/1/015005)

Full text not available in this repository.Request a copy


Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p–i–n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.


Massoubre, David, Xie, Enyuan ORCID logoORCID: https://orcid.org/0000-0001-7776-8091, Guilhabert, Benoit Jack Eloi ORCID logoORCID: https://orcid.org/0000-0002-3986-8566, Herrnsdorf, Johannes ORCID logoORCID: https://orcid.org/0000-0002-3856-5782, Gu, Erdan ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Watson, Ian ORCID logoORCID: https://orcid.org/0000-0002-8797-3993 and Dawson, Martin ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;