Micro-structured light emission from planar InGaN light-emitting diodes

Massoubre, David and Xie, Enyuan and Guilhabert, Benoit Jack Eloi and Herrnsdorf, Johannes and Gu, Erdan and Watson, Ian and Dawson, Martin (2013) Micro-structured light emission from planar InGaN light-emitting diodes. Semiconductor Science and Technology, 29 (1). 015005. ISSN 0268-1242

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Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p–i–n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.