Micro-structured light emission from planar InGaN light-emitting diodes

Massoubre, David and Xie, Enyuan and Guilhabert, Benoit Jack Eloi and Herrnsdorf, Johannes and Gu, Erdan and Watson, Ian and Dawson, Martin (2013) Micro-structured light emission from planar InGaN light-emitting diodes. Semiconductor Science and Technology, 29 (1). ISSN 0268-1242

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Abstract

Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p–i–n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.

Author(s):Massoubre, David, Xie, Enyuan, Guilhabert, Benoit Jack Eloi, Herrnsdorf, Johannes, Gu, Erdan, Watson, Ian and Dawson, Martin
Item type:Article
ID code:46414
Keywords:light emitting diodes, InGaN, light emission, Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics
Subjects:Science > Physics
Department:Faculty of Science > Physics > Institute of Photonics
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date deposited:07 Jan 2014 11:35
Last modified:10 May 2019 02:26
URI:https://strathprints.strath.ac.uk/id/eprint/46414
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