Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers

Cusco, R. and Pastor, D. and Hernandez, S. and Artus, L. and Martinez, O. and Jimenez, J. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2008) Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers. Semiconductor Science and Technology, 23 (10). 105002-1-105002-4. ISSN 0268-1242 (http://dx.doi.org/10.1088/0268-1242/23/10/105002)

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Abstract

We present a Raman scattering and cathodoluminescence study of a set of InxAl1-xN/GaN epilayers with InN fractions around the lattice-matched composition. We observed the A(1)(LO) and InN-like E-2 modes of the alloy, whose frequencies are in good agreement with theoretical predictions, but we were unable to detect the AlN-like E-2 mode. The InN-like E2 mode did not exhibit noticeable frequency shifts in the studied samples. This is explained by the presence of residual strain in the pseudomorphic InxAl1-xN films. A luminescence peak that shifts to lower energies with an increasing InN fraction was observed at energies above the band edge of the GaN substrate. The cathodoluminescence peak energy is lower than expected, indicating a large band-gap bowing in these alloy layers.

  • Item type:Article
    ID code:19490
    Dates:
    Date
    Event
    October 2008
    Published
    Notes:Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Faculty of Science > Physics > Institute of Photonics
    Depositing user: Strathprints Administrator
    Date deposited:08 Jun 2010 10:26
    Last modified:08 Apr 2024 17:41
    URI:https://strathprints.strath.ac.uk/id/eprint/19490
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