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2020
Massabuau, F.C-P. and Springbett, H.P. and Divitini, G. and Griffin, P.H. and Zhu, T. and Oliver, R.A. (2020) Sequential plan-view imaging of sub-surface structures in the transmission electron microscope. Materialia. 100798. ISSN 2589-1529
O'Hanlon, T.J. and Bao, A. and Massabuau, F.C.-P. and Kappers, M.J. and Oliver, R.A. (2020) Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques. Ultramicroscopy, 212. 112970. ISSN 0304-3991
Smith, E.J.W. and Piracha, A.H. and Fields, D. and Pomeroy, J.W. and Mackenzie, G.R. and Abdallah, Z. and Massabuau, F. C-P. and Hinz, A.M. and Wallis, D.J. and Oliver, R.A. and Kuball, M. and May, P.W. (2020) Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN. Carbon. ISSN 0008-6223 (In Press)
Palomares Garcia, Carla Maria and Di Bernardo, Angelo and Kimbell, Graham and Vickers, Mary E. and Massabuau, Fabien C-P. and Komori, Sachio and Divitini, Giorgio and Yasui, Yuuki and Gyeol Lee, Han and Kim, Jinkwon and Kim, Bongju and Blamire, Mark G. and Vecchione, Antonio and Fittipaldi, Rosalba and Maeno, Yoshiteru and Won Noh, Tae and Robinson, Jason W. A. (2020) Pair suppression caused by mosaic-twist defects in superconducting Sr2RuO4 thin-films prepared using pulsed laser deposition. Communications Materials, 1. 23. ISSN 2662-4443
Massabuau, Fabien C.-P. and Griffin, Peter H. and Springbett, Helen P. and Liu, Yingjun and Kumar, R. Vasant and Zhu, Tongtong and Oliver, Rachel A. (2020) Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching. APL Materials, 8 (3). 031115. ISSN 2166-532X
Smith, Matthew D. and Cuenca, Jerome A. and Field, Daniel E. and Fu, Yen-chun and Yuan, Chao and Massabuau, Fabien and Mandal, Soumen and Pomeroy, James W. and Oliver, Rachel A. and Uren, Michael J. and Elgaid, Khaled and Williams, Oliver A. and Thayne, Iain and Kuball, Martin (2020) GaN-on-diamond technology platform : bonding-free membrane manufacturing process. AIP Advances, 10 (3). 035306. ISSN 2158-3226
2019
Roberts, J.W. and Chalker, P.R. and Ding, B. and Oliver, R.A. and Gibbon, J.T. and Jones, L.A.H. and Dhanak, V.R. and Phillips, L.J. and Major, J.D. and Massabuau, F.C.-P. (2019) Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. Journal of Crystal Growth, 528. 125254. ISSN 0022-0248
Mandal, Soumen and Yuan, Chao and Massabuau, Fabien and Pomeroy, James W. and Cuenca, Jerome and Bland, Henry and Thomas, Evan and Wallis, David and Batten, Tim and Morgan, David and Oliver, Rachel and Kuball, Martin and Williams, Oliver A. (2019) Thick adherent diamond films on AlN with low thermal barrier resistance. ACS Applied Materials and Interfaces, 11 (43). pp. 40826-40834. ISSN 1944-8244
Roble, A. A. and Patra, S. K. and Massabuau, F. and Frentrup, M. and Leontiadou, M. A. and Dawson, P. and Kappers, M. J. and Oliver, R. A. and Graham, D. M. and Schulz, S. (2019) Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells. Scientific Reports. ISSN 2045-2322 (In Press)
Massabuau, Fabien C.-P and Bruckbauer, Jochen and Trager-Cowan, Carol and Oliver, Rachel A; Tuomisto, Filip, ed. (2019) Microscopy of defects in semiconductors. In: Characaterisation and Control of Defects in Semiconductors. Materials, Circuits and Devices . IET, [S.I.]. ISBN 978-1-78561-655-6
Moloney, J and Tesh, O and Singh, M and Roberts, J W and Jarman, J C and Lee, L C and Huq, T N and Brister, J and Karboyan, S and Kuball, M and Chalker, P R and Oliver, R A and Massabuau, F C-P (2019) Atomic layer deposited α-Ga2O3 solar-blind photodetectors. Journal of Physics D: Applied Physics, 52 (47). 475101. ISSN 0022-3727
Wang, Ruizhi and Purdie, David G. and Fan, Ye and Massabuau, Fabien C.-P. and Braeuninger-Weimer, Philipp and Burton, Oliver J. and Blume, Raoul and Schloegl, Robert and Lombardo, Antonio and Weatherup, Robert S. and Hofmann, Stephan (2019) A peeling approach for integrated manufacturing of large monolayer h‑BN crystals. ACS Nano, 13 (2). pp. 2114-2126. ISSN 1936-0851
2018
Roberts, J.W. and Jarman, J.C. and Johnstone, D.N. and Midgley, P.A. and Chalker, P.R. and Oliver, R.A. and Massabuau, F.C-P. (2018) α-Ga2O3 grown by low temperature atomic layer deposition on sapphire. Journal of Crystal Growth, 487. pp. 23-27. ISSN 0022-0248
2017
Massabuau, Fabien C-P. and Rhode, Sneha L. and Horton, Matthew K. and O'Hanlon, Thomas J. and Kovacs, Andras and Zielinski, Marcin S. and Kappers, Menno J. and Dunin-Borkowski, Rafal E. and Humphreys, Colin J. and Oliver, Rachel A. (2017) Dislocations in AlGaN: core structure, atom segregation, and optical properties. Nano Letters, 17 (8). pp. 4846-4852. ISSN 1530-6992
Massabuau, F. C-P. and Chen, P. and Horton, M. K. and Rhode, S. L. and Ren, C. X. and O'Hanlon, T. J. and Kovács, A. and Kappers, M. J. and Humphreys, C. J. and Dunin-Borkowski, R. E. and Oliver, R. A. (2017) Carrier localization in the vicinity of dislocations in InGaN. Journal of Applied Physics, 121 (1). 013104. ISSN 0021-8979