Effects of a Si-doped InGaN underlayer on the optical properties of InGaN/GaN quantum well structures with different numbers of QuantumWells

Christian, George and Kappers, Menno and Massabuau, Fabien and Humphreys, Colin and Oliver, Rachel and Dawson, Philip (2018) Effects of a Si-doped InGaN underlayer on the optical properties of InGaN/GaN quantum well structures with different numbers of QuantumWells. Materials, 11 (1736). 1736. ISSN 1996-1944 (https://doi.org/10.3390/ma11091736)

[thumbnail of Christian2018 - Effects of a Si-doped InGaN Underlayer on the]
Preview
 Text. Filename: Christian2018_Effects_of_a_Si_doped_InGaN_Underlayer_on_the.pdf
Final Published Version
License: Creative Commons Attribution 4.0 logo
Download (3MB)| Preview

Abstract

In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.

  • Item type:Article
    ID code:79480
    Dates:
    Date
    Event
    15 September 2018
    Published
    15 September 2018
    Published Online
    14 September 2018
    Accepted
    Notes:This article belongs to the Special Issue III-Nitrides Semiconductor Research in the UK and Ireland
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:04 Feb 2022 13:53
    Last modified:09 Apr 2024 03:00
    URI:https://strathprints.strath.ac.uk/id/eprint/79480
CORE (COnnecting REpositories)