Ni/Au contacts to corundum α-Ga2O3
Massabuau, Fabien C.-P. and Adams, Francesca and Nicol, David and Jarman, John C. and Frentrup, Martin and Roberts, Joseph W. and O'Hanlon, Thomas J. and Kovács, Andras and Chalker, Paul R. and Oliver, R. A. (2023) Ni/Au contacts to corundum α-Ga2O3. Japanese Journal of Applied Physics, 62 (SF). SF1008. ISSN 0021-4922 (https://doi.org/10.35848/1347-4065/acbc28)
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Abstract
The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga 2O 3 were investigated. Ni forms a Schottky contact with α-Ga 2O 3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni-Au bilayer dominate the electrical properties. It is found that 400 °C-450 °C is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.
ORCID iDs
Massabuau, Fabien C.-P. ORCID: https://orcid.org/0000-0003-1008-1652, Adams, Francesca, Nicol, David, Jarman, John C., Frentrup, Martin, Roberts, Joseph W., O'Hanlon, Thomas J., Kovács, Andras, Chalker, Paul R. and Oliver, R. A.;-
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Item type: Article ID code: 84263 Dates: DateEvent30 June 2023Published15 February 2023Published Online15 February 2023AcceptedNotes: Accepted manuscript published online 15 February 2023 Subjects: Technology > Mining engineering. Metallurgy
Science > Physics
Science > Chemistry > Physical and theoretical chemistryDepartment: Faculty of Science > Physics Depositing user: Pure Administrator Date deposited: 16 Feb 2023 16:31 Last modified: 12 Dec 2024 14:25 URI: https://strathprints.strath.ac.uk/id/eprint/84263