Pure single photon emission from an InGaN/GaN quantum dot

Holmes, M. J. and Zhu, T. and Massabuau, F. C.-P. and Jarman, J. and Oliver, R. A. and Arakawa, Y. (2021) Pure single photon emission from an InGaN/GaN quantum dot. APL Materials, 9 (6). 061106. ISSN 2166-532X

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    Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.

    ORCID iDs

    Holmes, M. J., Zhu, T., Massabuau, F. C.-P. ORCID logoORCID: https://orcid.org/0000-0003-1008-1652, Jarman, J., Oliver, R. A. and Arakawa, Y.;