Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

Nicol, D. and Oshima, Y. and Roberts, J. W. and Penman, L. and Cameron, D. and Chalker, P. R. and Martin, R. W. and Massabuau, F. C.-P. (2023) Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3. Applied Physics Letters, 122 (6). 062102. ISSN 0003-6951 (https://doi.org/10.1063/5.0135103)

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Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.


Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X and Massabuau, F. C.-P. ORCID logoORCID: https://orcid.org/0000-0003-1008-1652;