The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method

Massabuau, F. C.-P. and Tartan, C. C. and Traynier, R and Blenkhorn, W. E. and Kappers, M. J. and Dawson, P and Humphreys, C. J. and Oliver, R. A. (2014) The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method. Journal of Crystal Growth, 386 (88). pp. 88-93. ISSN 0022-0248

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Abstract

The impact of the miscut of a (0001) c-plane substrate on the structural and optical properties of InGaN/GaN quantum wells grown by metal-organic vapour phase epitaxy using a two-temperature method has been investigated. The two-temperature growth method involves exposure of the uncapped InGaN quantum well to a temperature ramp in an ammonia atmosphere before growth of the GaN barrier at a higher temperature. The resulting quantum well, consists of interlinking InGaN strips containing gaps which may impede carrier diffusion to dislocations. By increasing the substrate misorientation from 0° to 0.5° we show that the density of InGaN strips increases while the strip width reduces. Our data show that the PL efficiency increases with miscut and that the peak efficiency occurs at a lower excitation power density.

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