Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors

Massabuau, F. C.-P. and Roberts, J. W. and Nicol, D. and Edwards, P. R. and McLelland, M. and Dallas, G. L. and Hunter, D. A. and Nicolson, E. A. and Jarman, J. C. and Kovács, A. and Martin, R. W. and Oliver, R. A. and Chalker, P. R.; Rogers, David J. and Look, David C. and Teherani, Ferechteh H., eds. (2021) Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors. In: Proceedings Volume 11687, Oxide-based Materials and Devices. Proceedings of SPIE - The International Society for Optical Engineering . Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States. ISBN 9781510642096 (

[thumbnail of Massabuau-etal-SPIE-2021-Progress-in-atomic-layer-deposited-a-Ga2O3-materials]
Text. Filename: Massabuau_etal_SPIE_2021_Progress_in_atomic_layer_deposited_a_Ga2O3_materials.pdf
Accepted Author Manuscript

Download (3MB)| Preview


Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga2O3 films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga2O3 and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga2O3 films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.