Cathodoluminescence nano-characterization of semiconductors
Edwards, Paul R and Martin, Robert W (2011) Cathodoluminescence nano-characterization of semiconductors. Semiconductor Science and Technology, 26 (6). 064005. (https://doi.org/10.1088/0268-1242/26/6/064005)
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Abstract
We give an overview of the use of cathodoluminescence (CL) in scanning electron microscopy (SEM) for the nano-scale characterization of semiconducting materials and devices. We discuss the technical aspects of the measurement, such as factors limiting the spatial resolution and design considerations for efficient collection optics. The advantages of more recent developments in the technique are outlined, including the use of the hyperspectral imaging mode and the combination of CL and other SEM-based measurements. We illustrate these points with examples from our own experience of designing and constructing CL systems and applying the technique to the characterization of III-nitride materials and nanostructures.
ORCID iDs
Edwards, Paul R ORCID: https://orcid.org/0000-0001-7671-7698 and Martin, Robert W ORCID: https://orcid.org/0000-0002-6119-764X;-
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Item type: Article ID code: 30546 Dates: DateEvent30 June 2011Published29 March 2011Published OnlineSubjects: Science > Physics Department: Faculty of Science > Physics
Technology and Innovation Centre > Bionanotechnology
Technology and Innovation Centre > PhotonicsDepositing user: Pure Administrator Date deposited: 10 May 2011 09:18 Last modified: 30 Nov 2024 01:04 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/30546