Cathodoluminescence nano-characterization of semiconductors

Edwards, Paul R and Martin, Robert W (2011) Cathodoluminescence nano-characterization of semiconductors. Semiconductor Science and Technology, 26 (6). 064005.

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    Abstract

    We give an overview of the use of cathodoluminescence (CL) in scanning electron microscopy (SEM) for the nano-scale characterization of semiconducting materials and devices. We discuss the technical aspects of the measurement, such as factors limiting the spatial resolution and design considerations for efficient collection optics. The advantages of more recent developments in the technique are outlined, including the use of the hyperspectral imaging mode and the combination of CL and other SEM-based measurements. We illustrate these points with examples from our own experience of designing and constructing CL systems and applying the technique to the characterization of III-nitride materials and nanostructures.

    Author(s):Edwards, Paul R ORCID logoORCID: https://orcid.org/0000-0001-7671-7698 and Martin, Robert W ORCID logoORCID: https://orcid.org/0000-0002-6119-764X
    Item type:Article
    ID code:30546
    Keywords:optics, condensed matter, electrical matter, thin films, cathodoluminescence, Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Technology and Innovation Centre > Bionanotechnology
    Technology and Innovation Centre > Photonics
    Depositing user: Pure Administrator
    Date deposited:10 May 2011 09:18
    Last modified:06 Dec 2019 04:52
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/30546
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