Picture map of Europe with pins indicating European capital cities

Open Access research with a European policy impact...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by Strathclyde researchers, including by researchers from the European Policies Research Centre (EPRC).

EPRC is a leading institute in Europe for comparative research on public policy, with a particular focus on regional development policies. Spanning 30 European countries, EPRC research programmes have a strong emphasis on applied research and knowledge exchange, including the provision of policy advice to EU institutions and national and sub-national government authorities throughout Europe.

Explore research outputs by the European Policies Research Centre...

Strathprints

RBS analysis of InaGaN/GaN quantum wells for hybrid structures with efficient Forster coupling

Barradas, N.P. and Alves, E. and Pereira, S. and Watson, I.M. (2008) RBS analysis of InaGaN/GaN quantum wells for hybrid structures with efficient Forster coupling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 288 (8). pp. 1402-1406. ISSN 0168-583X

Full text not available in this repository. Request a copy from the Strathclyde author

Abstract

There is strong current interest in Förster resonant energy transfer (FRET) from a semiconductor quantum well (QW) to an overlayer of another luminescent material. The FRET process becomes efficient when the two materials are placed at interaction distance of a few nanometres. The additional requirement of large spectral overlap between the energy donor and acceptor can be satisfied by combinations of InGaN/GaN QWs (as donors) and overlayers of either light-emitting polymers or nanocrystalline semiconductor quantum dots (as acceptors), both of which can be tailored to have high absorption in the QW emission region. Here we study a set of custom grown InGaN/GaN single QW samples, in which the GaN cap layer thickness was varied to modulate the FRET rate in hybrid structures. We used high-resolution grazing angle RBS experiments to determine the GaN cap layer thickness, varied from 2 to 12 nm, which controlled the interaction distance between the QW and the coupled luminescent medium in hybrid structures. The very careful experiments and data analysis are discussed in detail, including a consideration of the errors in the final results obtained. An example of the use of the measured thickness values to confirm the dominance of sheet-to-sheet dipole-dipole interactions in QW-polymer hybrid structures is discussed.

Item type: Article
ID code: 8122
Keywords: rutherford backscattering, multilayers, GaN, InGaN, NDF, Optics. Light, Physics, Instrumentation, Nuclear and High Energy Physics
Subjects: Science > Physics > Optics. Light
Science > Physics
Department: Faculty of Science > Physics
Faculty of Science > Physics > Institute of Photonics
Depositing user: Miss Sharon Kelly
Date deposited: 14 Dec 2009 11:58
Last modified: 04 Aug 2017 03:54
URI: https://strathprints.strath.ac.uk/id/eprint/8122
Export data:
CORE (COnnecting REpositories)