Picture of boy being examining by doctor at a tuberculosis sanatorium

Understanding our future through Open Access research about our past...

Strathprints makes available scholarly Open Access content by researchers in the Centre for the Social History of Health & Healthcare (CSHHH), based within the School of Humanities, and considered Scotland's leading centre for the history of health and medicine.

Research at CSHHH explores the modern world since 1800 in locations as diverse as the UK, Asia, Africa, North America, and Europe. Areas of specialism include contraception and sexuality; family health and medical services; occupational health and medicine; disability; the history of psychiatry; conflict and warfare; and, drugs, pharmaceuticals and intoxicants.

Explore the Open Access research of the Centre for the Social History of Health and Healthcare. Or explore all of Strathclyde's Open Access research...

Image: Heart of England NHS Foundation Trust. Wellcome Collection - CC-BY.

Relaxation of compressively strained AlInN on GaN

Lorenz, K. and Franco, N. and Alves, E. and Pereira, S. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2008) Relaxation of compressively strained AlInN on GaN. Journal of Crystal Growth, 310 (18). pp. 4058-4064. ISSN 0022-0248

Full text not available in this repository. Request a copy from the Strathclyde author

Abstract

Epitaxial layers of wurtzite-phase Al1−xInxN, 120 nm thick with (0 0 0 1) orientation, were grown by metal organic chemical vapour deposition on GaN buffer layers at setpoint temperatures between 760 and 840 °C. For growth temperatures 800 °C, the AlInN layers grew with uniform composition, pseudomorphic with the underlying GaN buffer layer. In the temperature range studied, the InN fractions are a linear function of the setpoint temperature and straddle the near-lattice-match composition around Al0.83In0.17N. Lowering the growth temperature to 760 °C caused a compositional grading, a marked change in surface morphology, and a reduction in AlInN crystal quality. The resulting AlInN layer consists of a compressively strained interfacial layer with a composition of Al0.76In0.24N, and a mostly relaxed near-surface layer with a composition of Al0.81In0.19N. Atomic force microscopy suggests that a transition to a three-dimensional growth mode accompanies the structural relaxation and change in composition.