Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

Novikov, S. V. and Ting, M. and Yu, K.M. and Sarney, W.L. and Martin, R.W. and Svensson, S.P. and Walukiewicz, W. and Foxon, C.T. (2014) Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 404. pp. 9-13. ISSN 0022-0248

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    Abstract

    In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.