Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

Trager-Cowan, C. and Alasmari, A. and Avis, W. and Bruckbauer, J. and Edwards, P. R. and Hourahine, B. and Kraeusel, S. and Kusch, G. and Johnston, R. and Naresh-Kumar, G. and Martin, R. W. and Nouf-Allehiani, M. and Pascal, E. and Spasevski, L. and Thomson, D. and Vespucci, S. and Parbrook, P. J. and Smith, M. D. and Enslin, J. and Mehnke, F. and Kneissl, M. and Kuhn, C. and Wernicke, T. and Hagedorn, S. and Knauer, A. and Kueller, V. and Walde, S. and Weyers, M. and Coulon, P.-M. and Shields, P. A. and Zhang, Y. and Jiu, L. and Gong, Yipin and Smith, R. M. and Wang, T. and Winkelmann, A. (2019) Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7 (11). B73-B82. ISSN 2327-9125 (https://doi.org/10.1364/PRJ.7.000B73)

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Abstract

In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

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