Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy

Naresh-Kumar, G. and Edwards, P. R. and Batten, T. and Nouf-Allehiani, M. and Vilalta-Clemente, A. and Wilkinson, A. J. and Le Boulbar, E. and Shields, P. A. and Starosta, B. and Hourahine, B. and Martin, R. W. and Trager-Cowan, C. (2022) Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy. Journal of Applied Physics, 131 (7). 075303. ISSN 0021-8979 (https://doi.org/10.1063/5.0080024)

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Abstract

We demonstrate a non-destructive approach to understanding the growth modes of a GaN thin film and simultaneously quantify its residual strains and their effect on optical and electrical properties using correlative scanning electron microscopy techniques and Raman microscopy. Coincident strain maps derived from electron backscatter diffraction, cathodoluminescence, and confocal Raman techniques reveal strain variations with similar magnitude and directions, especially in the proximity of dislocations. Correlating confocal Raman imaging with electron channeling contrast imaging suggests that the dislocations organize themselves to form a distinctive pattern as a result of the underlying growth mask, where some of them align along the [0001] growth direction and some are inclined. The methodology presented in this work can be adopted to investigate any heteroepitaxial growth, in particular, those using selective masks on the growth substrates, where the morphology influences the subsequent growth.

  • Item type:Article
    ID code:79640
    Dates:
    Date
    Event
    21 February 2022
    Published
    16 February 2022
    Published Online
    26 January 2022
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:16 Feb 2022 14:46
    Last modified:11 Apr 2024 02:24
    URI:https://strathprints.strath.ac.uk/id/eprint/79640
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