Excited states of the A free exciton in CuInS2

Yakushev, M.V. and Martin, R.W. and Mudryi, A.V. and Ivaniukovich, A.V. (2008) Excited states of the A free exciton in CuInS2. Applied Physics Letters, 92 (11). ISSN 0003-6951

Full text not available in this repository.Request a copy from the Strathclyde author

Abstract

High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, EAn=2=1.5494 eV, and second, EAn=3=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFE A =18.5 meV and Bohr radius aB A=3.8 nm, bandgap Eg=1.5540 eV at 4.2 K and static dielectric constant =10.2 have been derived assuming a hydrogenic model.