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Sub-micron inGaN ring structures for high-efficiency LEDs

Choi, H.W. and Edwards, P.R. and Liu, C. and Jeon, C.W. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Tripathy, P. and Chua, S.J. (2004) Sub-micron inGaN ring structures for high-efficiency LEDs. Physica Status Solidi C, 1 (2). pp. 202-205. ISSN 1862-6351

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Abstract

A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 m and a wall width of 500 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.