Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
Edwards, P.R. and Martin, R.W. and Watson, I.M. and Liu, C. and Taylor, R.A. and Rice, J.H. and Na, J.H. and Robinson, J.W. and Smith, J.D. (2004) Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays. Applied Physics Letters, 85 (19). pp. 4281-4283. ISSN 0003-6951
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Abstract
InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5 ns, with linewidths down to 650 meV
Creators(s): |
Edwards, P.R. ![]() ![]() ![]() | Item type: | Article |
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ID code: | 3003 |
Keywords: | quantum dot emission, InGaN/GaN micropyramid arrays, nanoscience, Solid state physics. Nanoscience, Physics and Astronomy (miscellaneous) |
Subjects: | Science > Physics > Solid state physics. Nanoscience |
Department: | Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics |
Depositing user: | Strathprints Administrator |
Date deposited: | 12 Mar 2007 |
Last modified: | 20 Jan 2021 17:00 |
URI: | https://strathprints.strath.ac.uk/id/eprint/3003 |
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