Picture of DNA strand

Pioneering chemical biology & medicinal chemistry through Open Access research...

Strathprints makes available scholarly Open Access content by researchers in the Department of Pure & Applied Chemistry, based within the Faculty of Science.

Research here spans a wide range of topics from analytical chemistry to materials science, and from biological chemistry to theoretical chemistry. The specific work in chemical biology and medicinal chemistry, as an example, encompasses pioneering techniques in synthesis, bioinformatics, nucleic acid chemistry, amino acid chemistry, heterocyclic chemistry, biophysical chemistry and NMR spectroscopy.

Explore the Open Access research of the Department of Pure & Applied Chemistry. Or explore all of Strathclyde's Open Access research...

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

Kusch, Gunnar and Nouf-Allehiani, M. and Mehnke, Frank and Kuhn, Christian and Edwards, Paul R. and Wernicke, Tim and Knauer, Arne and Kueller, Viola and Naresh-Kumar, G. and Weyers, Markus and Kneissl, Michael and Trager-Cowan, Carol and Martin, Robert W. (2015) Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N. Applied Physics Letters, 107 (7). ISSN 0003-6951

[img]
Preview
Text (Kusch-etal-APL-2015-Spatial-clustering-of-defect-luminescence-centers-in-Si-doped-low)
Kusch_etal_APL_2015_Spatial_clustering_of_defect_luminescence_centers_in_Si_doped_low.pdf
Final Published Version
License: Creative Commons Attribution 3.0 logo

Download (1MB)| Preview

    Abstract

    A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the VIII3− vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.