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Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors

Svitsiankou, I. E. and Pavlovskii, V. N. and Lutsenko, E. V. and Yablonskii, G. P. and Mudryi, A. V. and Borodavchenko, O. M. and Zhivulko, V. D. and Yakushev, M. V. and Martin, R. (2018) Stimulated emission and optical properties of solid solutions of Cu(In,Ga)Se2 direct band gap semiconductors. Journal of Applied Spectroscopy, 85 (2). pp. 267-273. ISSN 0021-9037

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Abstract

Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films.