Comment on "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells" [Appl. Phys. Lett. 79, 2594 (2001)]

Martin, R W and O'Donnell, K P and Edwards, P R (2002) Comment on "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells" [Appl. Phys. Lett. 79, 2594 (2001)]. Applied Physics Letters, 81 (16). 3100. ISSN 0003-6951 (https://doi.org/10.1063/1.1515886)

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Abstract

This entry is a comment on "Effect of growth interruptions on the light emission and indium clustering.

ORCID iDs

Martin, R W ORCID: https://orcid.org/0000-0002-6119-764X

O'Donnell, K P ORCID: https://orcid.org/0000-0003-3072-3675

Edwards, P R ORCID: https://orcid.org/0000-0001-7671-7698

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  Item type:	Article
  ID code:	30542
  Dates:	Date Event 14 October 2002 Published
  Keywords:	energies, dots, indium compounds, gallium compounds, wide band gap semiconductors , Physics, Physics and Astronomy (miscellaneous)
  Subjects:	Science > Physics
  Department:	Faculty of Science > Physics
  Depositing user:	Pure Administrator
  Date deposited:	14 Jun 2011 11:44
  Last modified:	25 May 2023 09:08
  URI:	https://strathprints.strath.ac.uk/id/eprint/30542