Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods

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Mudryi, A.V. and Karotki, A.V. and Yakushev, M.V. and Martin, R.W. (2009) Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods. Journal of Applied Spectroscopy, 76 (2). pp. 215-219. ISSN 0021-9037 (http://dx.doi.org/10.1007/s10812-009-9163-5)

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Abstract

Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS2 grown by CVT and THM, respectively.

ORCID iDs

Mudryi, A.V., Karotki, A.V., Yakushev, M.V. and Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X;
  • Item type:Article
    ID code:19124
    Dates:
    Date
    Event
    March 2009
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Strathprints Administrator
    Date deposited:19 May 2010 14:21
    Last modified:30 Jan 2025 17:58
    URI:https://strathprints.strath.ac.uk/id/eprint/19124
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