Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy

Foronda, Humberto M. and Hunter, Daniel A. and Pietsch, Mike and Sulmoni, Luca and Muhin, Anton and Graupeter, Sarina and Susilo, Norman and Schilling, Marcel and Enslin, Johannes and Irmscher, Klaus and Martin, Robert W. and Wernicke, Tim and Kneissl, Michael (2020) Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 117 (22). 221101. ISSN 0003-6951 (https://doi.org/10.1063/5.0031468)

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Abstract

In this work, the growth and conductivity of semipolar AlxGa1−xN:Si with (11-22) orientation are investigated. AlxGa1−xN:Si (x = 0.60 ± 0.03 and x = 0.80 ± 0.02) layers were grown with different SiH4 partial pressures, and the electrical properties were determined using Hall measurements at room temperature. The aluminum mole fraction was measured by wavelength dispersive x-ray spectroscopy and x-ray diffraction, and the Si-concentration was measured by wavelength dispersive x-ray spectroscopy and secondary ion mass spectroscopy. Layer resistivities as low as 0.024 Ω cm for x = 0.6 and 0.042 Ω cm for x = 0.8 were achieved. For both aluminum mole fractions, the resistivity exhibits a minimum with the increasing Si concentration, which can be explained by compensation due to the formation of cation vacancy complexes at high doping levels. The onset of self-compensation occurs at larger estimated Si concentrations for larger Al contents.

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