High figure‐of‐merit gallium oxide UV photodetector on silicon by molecular beam epitaxy : a path toward monolithic integration

Mukhopadhyay, Partha and Hatipoglu, Isa and Sakthivel, Tamil Selvan and Hunter, Daniel A. and Gunasekar, Naresh Kumar and Edwards, Paul R. and Martin, Robert W. and Seal, Sudipta and Schoenfeld, Winston Vaughan (2021) High figure‐of‐merit gallium oxide UV photodetector on silicon by molecular beam epitaxy : a path toward monolithic integration. Advanced Photonics Research, 2 (4). 2000067. (https://doi.org/10.1002/adpr.202000067)

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Abstract

A high figure‐of‐merit UV‐C solar‐blind photodetector (PD) fabricated from thin‐film beta‐gallium oxide (β‐Ga2O3) grown on n‐Si substrates by plasma‐assisted molecular beam epitaxy is demonstrated. Film growth sequences for nucleation of Ga2O3 on (100)‐ and (111)‐oriented Si substrates are developed, and the influence of crucial growth parameters is systematically investigated, namely, substrate temperature, oxygen flow rate, and plasma power on the functional properties of the PDs. The PDs show an ultra‐high responsivity of 837 A W−1 and a fast ON/OFF time below 4 ms at −5 V. In addition, they display strong rectifying properties and a sharp cutoff below 280 nm with the average responsivities between 10 and 80 A W−1, a detectivity on the order of 1010 Jones, and rise/fall times between 4 and 500 ms. High photoconductive gain is likely to be due to the mid‐bandgap donor/acceptor defect levels, including oxygen vacancies in the form of self‐trapped holes. It is demonstrated that these defect levels can be modified by controlling the growth conditions, thereby allowing for tailoring of the PD characteristics for specific applications. The methodology represents a cost‐effective solution over homoepitaxial approaches, with characteristics that meet or exceed those reported previously, offering new possibilities for on‐wafer integration with Si opto‐electronics.

ORCID iDs

Mukhopadhyay, Partha, Hatipoglu, Isa, Sakthivel, Tamil Selvan, Hunter, Daniel A., Gunasekar, Naresh Kumar ORCID logoORCID: https://orcid.org/0000-0002-9642-8137, Edwards, Paul R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Martin, Robert W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Seal, Sudipta and Schoenfeld, Winston Vaughan;
  • Item type:Article
    ID code:74787
    Dates:
    Date
    Event
    7 April 2021
    Published
    8 December 2020
    Published Online
    30 November 2020
    Accepted
    14 November 2020
    Submitted
    Keywords:UV-C photodetector, gallium oxide, molecular beam epitaxy, heterostructure, heterointegration, Physics, Physics and Astronomy(all)
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:03 Dec 2020 15:37
    Last modified:14 Nov 2023 11:06
    URI:https://strathprints.strath.ac.uk/id/eprint/74787
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