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EPRC is a leading institute in Europe for comparative research on public policy, with a particular focus on regional development policies. Spanning 30 European countries, EPRC research programmes have a strong emphasis on applied research and knowledge exchange, including the provision of policy advice to EU institutions and national and sub-national government authorities throughout Europe.

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Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off

Xiong, C. and Rizzi, F. and Bejtka, K. and Edwards, P. R. and Gu, E. and Dawson, M. D. and Martin, R. W. and Watson, I. M. (2010) Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off. Superlattices and Microstructures, 47 (1). pp. 129-133.

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Abstract

A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1−λ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μm×8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.