Optical and structural properties of Eu-implanted InxAl1−xN
Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and Matias, V. and Vantomme, A. and Lorenz, K. and Alves, E. and Watson, I.M. (2009) Optical and structural properties of Eu-implanted InxAl1−xN. Journal of Applied Physics, 106 (8). ISSN 0021-8979
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Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.
Author(s): | Roqan, I.S., O'Donnell, K.P., Martin, R.W., Trager-Cowan, C., Matias, V., Vantomme, A., Lorenz, K., Alves, E. and Watson, I.M. | Item type: | Article |
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ID code: | 18902 |
Keywords: | aluminium compounds, europium, III-V semiconductors, indium compounds, ion implantation, photoluminescence, quenching (thermal), Rutherford backscattering, semiconductor doping, semiconductor epitaxial layers, wide band gap semiconductors, X-ray diffraction, Optics. Light, Physics and Astronomy(all) |
Subjects: | Science > Physics > Optics. Light |
Department: | Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics |
Depositing user: | Strathprints Administrator |
Date deposited: | 24 Jun 2010 10:44 |
Last modified: | 30 Jan 2019 08:47 |
URI: | https://strathprints.strath.ac.uk/id/eprint/18902 |
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