Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates

Tan, L.-T. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. and Wu, Z.H. and Ponce, F.A. (2008) Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates. Applied Physics Letters, 92 (3). 031907. ISSN 0003-6951 (https://doi.org/10.1063/1.2837630)

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Abstract

Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1−xInxN. Screening of these fields is studied using the excitation power dependence of the PL

ORCID iDs

Tan, L.-T., Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Wu, Z.H. and Ponce, F.A.;
  • Item type:Article
    ID code:14015
    Dates:
    Date
    Event
    25 January 2008
    Published
    Keywords:single quantum wells, photoluminescence, aluminium compounds, gallium compounds, Physics, Physics and Astronomy (miscellaneous)
    Subjects:Science > Physics
    Department:Faculty of Science > Physics > Institute of Photonics
    Faculty of Science > Physics
    Depositing user: Miss Sharon Kelly
    Date deposited:20 Dec 2009 12:36
    Last modified:17 Mar 2023 01:59
    URI:https://strathprints.strath.ac.uk/id/eprint/14015
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