Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE

Shaw, Martin and Yu, K.M. and Ting, M. and Powell, R. E. L. and Sarney, W. L. and Svensson, S. P. and Kent, A. J. and Walukiewicz, W. and Foxon, C. T. and Novikov, S. V. and Martin, Robert W. (2014) Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE. Journal of Physics D: Applied Physics, 47 (46). 465102. ISSN 0022-3727

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    Abstract

    In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.