Picture of boy being examining by doctor at a tuberculosis sanatorium

Understanding our future through Open Access research about our past...

Strathprints makes available scholarly Open Access content by researchers in the Centre for the Social History of Health & Healthcare (CSHHH), based within the School of Humanities, and considered Scotland's leading centre for the history of health and medicine.

Research at CSHHH explores the modern world since 1800 in locations as diverse as the UK, Asia, Africa, North America, and Europe. Areas of specialism include contraception and sexuality; family health and medical services; occupational health and medicine; disability; the history of psychiatry; conflict and warfare; and, drugs, pharmaceuticals and intoxicants.

Explore the Open Access research of the Centre for the Social History of Health and Healthcare. Or explore all of Strathclyde's Open Access research...

Image: Heart of England NHS Foundation Trust. Wellcome Collection - CC-BY.

Selective wet etching of lattice-matched AlInN-GaN heterostructures

Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. and Watson, I.M. (2007) Selective wet etching of lattice-matched AlInN-GaN heterostructures. Journal of Crystal Growth, 300 (1). pp. 254-258. ISSN 0022-0248

Full text not available in this repository. Request a copy from the Strathclyde author

Abstract

Wet etching of AlInN-GaN epitaxial heterostructures, containing AlInN layers with InN mole fractions close to 0.17 has been studied. One molar aqueous solution of the chelating amine 1,2-diaminoethane (DAE) proved to selectively etch the AlInN layers, without the need for heating above room temperature, or photo-assistance. In experiments with a (0 0 0 1)-oriented AlInN-on-GaN bilayer, the mode of removal of the AlInN layer was predominantly lateral etching, initiated from the sidewalls of pit defects in the AlInN layer. The lateral etch rate was estimated at 60 nm/h. The GaN buffer layer surface was roughened concurrently with etching of the AlInN, although the DAE solution has no effect on as-grown GaN (0 0 0 1) surfaces. The roughening of the GaN surface is tentatively attributed to the charge accumulation layer expected at the AlInN-GaN heterointerface. The DAE etchant also proved effective at removing buried AlInN layers from trilayer and more complex multilayer structures, leading to the prospect of epitaxial lift-off processes, and the fabrication of three-dimensional engineered microstructures. These capabilities were demonstrated by the production of suspended microdisk structures from a GaN-AlInN-GaN trilayer, using a combination of dry and wet etching.