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Open Access research with a European policy impact...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by Strathclyde researchers, including by researchers from the European Policies Research Centre (EPRC).

EPRC is a leading institute in Europe for comparative research on public policy, with a particular focus on regional development policies. Spanning 30 European countries, EPRC research programmes have a strong emphasis on applied research and knowledge exchange, including the provision of policy advice to EU institutions and national and sub-national government authorities throughout Europe.

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Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. and Sellers, I.R. and Semond, F. (2005) Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities. Physica Status Solidi A: Applications and Materials Science, 202 (14). pp. 2648-2652.

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Abstract

AlInN alloys achieve an in-plane lattice match to hexagonal GaN at an indium nitride mole fraction of 18%. Meanwhile Al0.82In0.18N displays a refractive index contrast of 7% with GaN at visible wavelengths. We illustrate the use of Al0.82In0.18N insertion layers to control layer thicknesses during homoepitaxial growth of GaN-based microcavities, using in situ optical reflectometry. The structures discussed are 3 /2 microcavities incorporating distributed InGaN quantum wells tailored for emission at 400 nm. As-grown samples have been characterised by techniques including cathodoluminescence spectroscopy. In addition to their role in growth monitoring, there are several post-growth processing steps in which Al0.82In0.18N insertion layers can assist microcavity fabrication. We focus here on a demonstration of the 1:5 etch rate selectivity obtainable between Al0.82In0.18</SUB >N and GaN in reactive ion etching