Picture offshore wind farm

Open Access research that is improving renewable energy technology...

Strathprints makes available scholarly Open Access content by researchers across the departments of Mechanical & Aerospace Engineering (MAE), Electronic & Electrical Engineering (EEE), and Naval Architecture, Ocean & Marine Engineering (NAOME), all of which are leading research into aspects of wind energy, the control of wind turbines and wind farms.

Researchers at EEE are examining the dynamic analysis of turbines, their modelling and simulation, control system design and their optimisation, along with resource assessment and condition monitoring issues. The Energy Systems Research Unit (ESRU) within MAE is producing research to achieve significant levels of energy efficiency using new and renewable energy systems. Meanwhile, researchers at NAOME are supporting the development of offshore wind, wave and tidal-current energy to assist in the provision of diverse energy sources and economic growth in the renewable energy sector.

Explore Open Access research by EEE, MAE and NAOME on renewable energy technologies. Or explore all of Strathclyde's Open Access research...

Structural and optical properties of Ga auto-incorporated InAlN epilayers

Taylor, E. and Smith, M.D. and Sadler, T.C. and Lorenz, K. and Li, H.N. and Alves, E. and Parbrook, P.J. and Martin, R.W. (2014) Structural and optical properties of Ga auto-incorporated InAlN epilayers. Journal of Crystal Growth, 408. pp. 97-101. ISSN 0022-0248

[img]
Preview
PDF (Taylor-etal-JCG2014-structural-and-optical-properties-of-ga-auto-incorporated)
Taylor_etal_JCG2014_structural_and_optical_properties_of_ga_auto_incorporated.pdf
Final Published Version
License: Creative Commons Attribution 4.0 logo

Download (543kB) | Preview

Abstract

InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.