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Powering innovation in artificial intelligence with Open Access research...

Artificial intelligence (AI) and machine learning (ML) together represent a research frontier with a wide variety of discipline specific applications. At Strathclyde researchers in Computer & Information Sciences are exploring improved AI planning models to enable improved decision making by automous agents. Meanwhile, research conducted by the Aerospace Centre of Excellence is using AI and computational techniques to optimize the efficacy of certain astronautic applications. This includes 'global trajectory optimization' to aircraft and spacecraft design, from the planning and scheduling for autonomous vehicles to the synthesis of robust controllers for airplanes or satellites.

AI is also transforming the research agenda within Finance, where researchers are exploring the potential of AI and machine learning in evaluating banking risks and in new, emerging aspects of FinTech.

Explore some of this Open Access research from Computer & Information Sciences, Aerospace Centre of Excellence and Finance. Or explore all of Strathclyde's Open Access research...

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Number of items: 15.


Edwards, Paul R. and O'Donnell, Kevin P. and Singh, Akhilesh K. and Cameron, Douglas and Lorenz, Katharina and Yamaga, Mitsuo and Leach, Jacob H. and Kappers, Menno J. and Boćkowski, Michal (2018) Hysteretic photochromic switching (HPS) in doubly doped GaN(Mg):Eu—a summary of recent results. Materials, 11 (10). 1800. ISSN 1996-1944

Singh, A K and O'Donnell, K P and Edwards, P R and Lorenz, K and Leach, J H and Boćkowski, M (2018) Eu-Mg defects and donor-acceptor pairs in GaN : photodissociation and the excitation transfer problem. Journal of Physics D: Applied Physics, 51 (6). 065106. ISSN 0022-3727


Singh, A. K. and O'Donnell, K. P. and Edwards, P. R. and Cameron, D. and Lorenz, K. and Kappers, M. J. and Boćkowski, M. and Yamaga, M. and Prakash, R. (2017) Luminescence of Eu3+ in GaN(Mg, Eu): transitions from the 5D1 level. Applied Physics Letters, 111 (24). 241105. ISSN 0003-6951

Singh, A. K. and O'Donnell, K. P. and Edwards, P. R. and Lorenz, K. and Kappers, M. J. and Bokowski, M. (2017) Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor. Scientific Reports, 7. 41982. ISSN 2045-2322


O'Donnell, K. P. and Edwards, P. R. and Yamaga, M. and Lorenz, K. and Kappers, M. J. and Boćkowski, M. (2016) Crystalfield symmetries of luminescent Eu3+ centers in GaN : the importance of the 5D0 to 7F1 transition. Applied Physics Letters, 108 (2). 022102. ISSN 0003-6951


Carvalho, Daniel and Morales, Francisco M. and Ben, Teresa and García, Rafael and Redondo-Cubero, Andrés and Alves, Eduardo and Lorenz, Katharina and Edwards, Paul R. and O'Donnell, Kevin P. and Wetzel, Christian (2015) Quantitative chemical mapping of InGaN quantum wells from calibrated high-angle annular dark field micrographs. Microscopy and Microanalysis, 21 (4). pp. 994-1005. ISSN 1431-9276

Yamaga, M and Watanabe, H and Kurahashi, M and O'Donnell, K P and Lorenz, K and Boćkowski, M (2015) Indirect excitation of Eu3+ in GaN codoped with Mg and Eu. Journal of Physics: Conference Series, 619 (1). 012025. ISSN 1742-6588

Sousa, Marco A. and Esteves, Teresa C. and Sedrine, Nabiha Ben and Rodrigues, Joana and Lourenço, Márcio B. and Redondo-Cubero, Andrés and Alves, Eduardo and O'Donnell, Kevin P. and Bockowski, Michal and Wetzel, Christian and Correia, Maria R. and Lorenz, Katharina and Monteiro, Teresa (2015) Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. Scientific Reports, 5. 9703. ISSN 2045-2322

Magalhães, S. and Watson, I. M. and Pereira, S. and Franco, N. and Tan, L. T. and Martin, R. W. and O'Donnell, K. P. and Alves, E. and Araújo, J. P. and Monteiro, T. and Lorenz, K. (2015) Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents. Journal of Physics D: Applied Physics, 48 (1). 015103. ISSN 0022-3727

Ben Sedrine, N. and Esteves, T. C. and Rodrigues, J. and Rino, L. and Correia, M. R. and Sequeira, M. C. and Neves, A. J. and Alves, E. and Boćkowski, M. and Edwards, P. R. and O'Donnell, K.P. and Lorenz, K. and Monteiro, T. (2015) Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure. Scientific Reports, 5. 13739. ISSN 2045-2322


Taylor, E. and Smith, M.D. and Sadler, T.C. and Lorenz, K. and Li, H.N. and Alves, E. and Parbrook, P.J. and Martin, R.W. (2014) Structural and optical properties of Ga auto-incorporated InAlN epilayers. Journal of Crystal Growth, 408. pp. 97-101. ISSN 0022-0248

O'Donnell, K.P. and Edwards, P.R. and Kappers, M.J. and Lorenz, K. and Alves, E.J. and Boćkowski, M.X. (2014) Europium-doped GaN(Mg) : beyond the limits of the light-emitting diode. Physica Status Solidi C, 11 (3-4). 662–665. ISSN 1610-1642

Miranda, S. M. C. and Edwards, P. R. and O'Donnell, K. P. and Boćkowski, M. and Alves, E. and Roqan, I. S. and Vantomme, A. and Lorenz, K. (2014) Sequential multiple-step europium ion implantation and annealing of GaN. Physica Status Solidi C, 11 (2). pp. 253-257. ISSN 1610-1642

Smith, M. D. and Taylor, E. and Sadler, T. C. and Zubialevich, V. Z. and Lorenz, K. and Li, H. N. and O'Connell, J. and Alves, E. and Holmes, J. D. and Martin, R. W. and Parbrook, P. J. (2014) Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry. C, 2 (29). pp. 5787-5792. ISSN 2050-7526


Lorenz, Katharina K. and Miranda, S. M C S.M.C. and Alves, E. Jorge E.J. and Roqan, Iman S. I.S. and O'Donnell, Kevin Peter K.P. and Boćkowski, Michał X. M.X.; (2012) High pressure annealing of Europium implanted GaN. In: Proceedings of SPIE - The International Society for Optical Engineering. SPIE, pp. 82-87.

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