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Open Access research with a European policy impact...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by Strathclyde researchers, including by researchers from the European Policies Research Centre (EPRC).

EPRC is a leading institute in Europe for comparative research on public policy, with a particular focus on regional development policies. Spanning 30 European countries, EPRC research programmes have a strong emphasis on applied research and knowledge exchange, including the provision of policy advice to EU institutions and national and sub-national government authorities throughout Europe.

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Number of items: 12.


Singh, A. K. and O'Donnell, K. P. and Edwards, P. R. and Lorenz, K. and Kappers, M. J. and Bokowski, M. (2017) Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor. Scientific Reports, 7. ISSN 2045-2322

O'Donnell, K. P. and Edwards, P. R. and Yamaga, M. and Lorenz, K. and Kappers, M. J. and Boćkowski, M. (2016) Crystalfield symmetries of luminescent Eu3+ centers in GaN : the importance of the 5D0 to 7F1 transition. Applied Physics Letters, 108 (2). ISSN 0003-6951

Carvalho, Daniel and Morales, Francisco M. and Ben, Teresa and García, Rafael and Redondo-Cubero, Andrés and Alves, Eduardo and Lorenz, Katharina and Edwards, Paul R. and O'Donnell, Kevin P. and Wetzel, Christian (2015) Quantitative chemical mapping of InGaN quantum wells from calibrated high-angle annular dark field micrographs. Microscopy and Microanalysis, 21 (4). pp. 994-1005. ISSN 1431-9276

Yamaga, M and Watanabe, H and Kurahashi, M and O'Donnell, K P and Lorenz, K and Boćkowski, M (2015) Indirect excitation of Eu3+ in GaN codoped with Mg and Eu. Journal of Physics: Conference Series, 619 (1). ISSN 1742-6588

Sousa, Marco A. and Esteves, Teresa C. and Sedrine, Nabiha Ben and Rodrigues, Joana and Lourenço, Márcio B. and Redondo-Cubero, Andrés and Alves, Eduardo and O'Donnell, Kevin P. and Bockowski, Michal and Wetzel, Christian and Correia, Maria R. and Lorenz, Katharina and Monteiro, Teresa (2015) Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. Scientific Reports, 5. ISSN 2045-2322

Magalhães, S. and Watson, I. M. and Pereira, S. and Franco, N. and Tan, L. T. and Martin, R. W. and O'Donnell, K. P. and Alves, E. and Araújo, J. P. and Monteiro, T. and Lorenz, K. (2015) Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents. Journal of Physics D: Applied Physics, 48 (1). ISSN 0022-3727

Ben Sedrine, N. and Esteves, T. C. and Rodrigues, J. and Rino, L. and Correia, M. R. and Sequeira, M. C. and Neves, A. J. and Alves, E. and Boćkowski, M. and Edwards, P. R. and O'Donnell, K.P. and Lorenz, K. and Monteiro, T. (2015) Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure. Scientific Reports, 5. ISSN 2045-2322

Taylor, E. and Smith, M.D. and Sadler, T.C. and Lorenz, K. and Li, H.N. and Alves, E. and Parbrook, P.J. and Martin, R.W. (2014) Structural and optical properties of Ga auto-incorporated InAlN epilayers. Journal of Crystal Growth, 408. pp. 97-101. ISSN 0022-0248

O'Donnell, K.P. and Edwards, P.R. and Kappers, M.J. and Lorenz, K. and Alves, E.J. and Boćkowski, M.X. (2014) Europium-doped GaN(Mg) : beyond the limits of the light-emitting diode. Physica Status Solidi C, 11 (3-4). 662–665. ISSN 1862-6351

Miranda, S. M. C. and Edwards, P. R. and O'Donnell, K. P. and Boćkowski, M. and Alves, E. and Roqan, I. S. and Vantomme, A. and Lorenz, K. (2014) Sequential multiple-step europium ion implantation and annealing of GaN. Physica Status Solidi C, 11 (2). pp. 253-257. ISSN 1862-6351

Smith, M. D. and Taylor, E. and Sadler, T. C. and Zubialevich, V. Z. and Lorenz, K. and Li, H. N. and O'Connell, J. and Alves, E. and Holmes, J. D. and Martin, R. W. and Parbrook, P. J. (2014) Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry. C, 2 (29). pp. 5787-5792. ISSN 2050-7526

Book Section

Lorenz, Katharina K. and Miranda, S. M C S.M.C. and Alves, E. Jorge E.J. and Roqan, Iman S. I.S. and O'Donnell, Kevin Peter K.P. and Boćkowski, Michał X. M.X. (2012) High pressure annealing of Europium implanted GaN. In: Proceedings of SPIE - The International Society for Optical Engineering. SPIE, pp. 82-87.

This list was generated on Mon Sep 25 05:38:30 2017 BST.