Hysteretic photochromic switching (HPS) in doubly doped GaN(Mg):Eu—a summary of recent results

Edwards, Paul R. and O'Donnell, Kevin P. and Singh, Akhilesh K. and Cameron, Douglas and Lorenz, Katharina and Yamaga, Mitsuo and Leach, Jacob H. and Kappers, Menno J. and Boćkowski, Michal (2018) Hysteretic photochromic switching (HPS) in doubly doped GaN(Mg):Eu—a summary of recent results. Materials, 11 (10). ISSN 1996-1944

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    Abstract

    Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu+ into p-type GaN templates, the Strathclyde University group, in collaboration with IST Lisbon and Unipress Warsaw, discovered hysteretic photochromic switching (HPS) in the photoluminescence spectrum of doubly doped GaN(Mg):Eu. Our recent work, summarised in this contribution, has used time-, temperature- and light-induced changes in the Eu intra-4f shell emission spectrum to deduce the microscopic nature of the Mg-Eu defects that form in this material. As well as shedding light on the Mg acceptor in GaN, we propose a possible role for these emission centres in quantum information and computing.