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Driving innovations in manufacturing: Open Access research from DMEM

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Photoluminescence studies of Eu-implanted GaN epilayers

Katchkanov, V and O'Donnell, KP and Dalmasso, S and Martin, RW and Braud, A and Nakanishi, Y and Wakahara, A and Yoshida, A (2005) Photoluminescence studies of Eu-implanted GaN epilayers. Physica Status Solidi B, 242 (7). pp. 1491-1496. ISSN 0370-1972

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Abstract

Photoluminescence (PL) of Eu-implanted GaN epilayers grown by Metalorganic Vapour Phase Epitaxy (MOVPE) was studied as a function of temperature. The implantation was done at ion energies of 75 keV, 200 keV and 350 keV with doses of 10(14) CM-2 and 10(15) CM-2. PL spectra of all samples show the emission 5 7 31 line assigned to the D-5(0)-F-7(2) transition of EU3+ in GaN to be split into three spectral components at 620.7 nm, 621.6 nm and 622.5 nm. The split lines are seen to have very different temperature dependences of integrated intensity. Such splitting might be explained by EU3+ ion site multiplicity. The variation of the temperature quenching factor of the PL integrated intensity from sample to sample and from line to line suggests that optically active Eu3+ ions are coupled to defects and impurities, thus forming complexes with different energy position of the carrier trapping level in the bandgap of GaN. The appearance and quenching of an additional PL line at 617.3 nm with increasing temperature is observed in the range of 13-295 K.