Optical energies of AllnN epilayers
Wang, K. and Martin, R. W. and Amabile, D. and Edwards, P. R. and Hernandez, S. and Nogales, E. and O'Donnell, K. P. and Lorenz, K. and Alves, E. and Matias, V. and Vantomme, A. and Wolverson, D. and Watson, I. M. (2008) Optical energies of AllnN epilayers. Journal of Applied Physics, 103 (7). 073510. ISSN 0021-8979 (https://doi.org/10.1063/1.2898533)
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Abstract
Optical energy gaps are measured for high-quality Al1−xInxN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13<x<0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field
ORCID iDs
Wang, K., Martin, R. W. ORCID: https://orcid.org/0000-0002-6119-764X, Amabile, D., Edwards, P. R. ORCID: https://orcid.org/0000-0001-7671-7698, Hernandez, S., Nogales, E., O'Donnell, K. P. ORCID: https://orcid.org/0000-0003-3072-3675, Lorenz, K., Alves, E., Matias, V., Vantomme, A., Wolverson, D. and Watson, I. M. ORCID: https://orcid.org/0000-0002-8797-3993;-
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Item type: Article ID code: 14005 Dates: DateEvent1 April 2008PublishedSubjects: Science > Physics Department: Faculty of Science > Physics
Faculty of Science > Physics > Institute of PhotonicsDepositing user: Miss Sharon Kelly Date deposited: 16 Dec 2009 09:33 Last modified: 11 Oct 2024 00:19 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/14005