Quantum well engineering in InGaN/GaN core-shell nanorod structures

Bryce, C. G. and Le Boulbar, E. D. and Coulon, P.-M. and Edwards, P. R. and Gîrgel, I. and Allsopp, D. W. E. and Shields, P. A. and Martin, R. W. (2017) Quantum well engineering in InGaN/GaN core-shell nanorod structures. Journal of Physics D: Applied Physics, 50 (42). 42LT01. ISSN 0022-3727

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    Abstract

    We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

    Author(s):Bryce, C. G. ORCID logoORCID: https://orcid.org/0000-0003-4577-3472, Le Boulbar, E. D., Coulon, P.-M., Edwards, P. R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Gîrgel, I., Allsopp, D. W. E., Shields, P. A. and Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X
    Item type:Article
    ID code:61754
    Keywords:cathodoluminescence, quantum wells, Physics, Physics and Astronomy(all)
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Strategic Research Themes > Measurement Science and Enabling Technologies
    Depositing user: Pure Administrator
    Date deposited:07 Sep 2017 14:30
    Last modified:13 Nov 2019 04:25
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/61754
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