Individually-addressed planar nanoscale InGaN-based light emitters
Massoubre, D. and Edwards, P. R. and Xie, E. and Richardson, E. and Watson, I. M. and Gu, E. and Martin, R. W. and Dawson, M. D. (2012) Individually-addressed planar nanoscale InGaN-based light emitters. In: 2012 IEEE Photonics Conference (IPC), 2012-09-23 - 2012-09-27.
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Abstract
We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
ORCID iDs
Massoubre, D., Edwards, P. R.
ORCID: https://orcid.org/0000-0001-7671-7698, Xie, E. ORCID: https://orcid.org/0000-0001-7776-8091, Richardson, E., Watson, I. M. ORCID: https://orcid.org/0000-0002-8797-3993, Gu, E. ORCID: https://orcid.org/0000-0002-7607-9902, Martin, R. W. ORCID: https://orcid.org/0000-0002-6119-764X and Dawson, M. D. ORCID: https://orcid.org/0000-0002-6639-2989;
Item type: Conference or Workshop Item(Paper) ID code: 43328 Dates: DateEvent23 September 2012PublishedKeywords: InGaN-based light emitters , nanoscale-LEDs , photonics, optics, Optics. Light Subjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics
Faculty of Science > Physics > Institute of Photonics
Technology and Innovation Centre > Photonics
Technology and Innovation Centre > BionanotechnologyDepositing user: Pure Administrator Date deposited: 26 Mar 2013 10:35 Last modified: 20 Jan 2021 14:48 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/43328
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