Individually-addressed planar nanoscale InGaN-based light emitters
Massoubre, D. and Edwards, P. R. and Xie, E. and Richardson, E. and Watson, I. M. and Gu, E. and Martin, R. W. and Dawson, M. D. (2012) Individually-addressed planar nanoscale InGaN-based light emitters. In: 2012 IEEE Photonics Conference (IPC), 2012-09-23 - 2012-09-27.
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Abstract
We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
Author(s): | Massoubre, D., Edwards, P. R., Xie, E., Richardson, E., Watson, I. M., Gu, E., Martin, R. W. and Dawson, M. D. | Item type: | Conference or Workshop Item(Paper) |
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ID code: | 43328 |
Keywords: | InGaN-based light emitters , nanoscale-LEDs , photonics, optics, Optics. Light |
Subjects: | Science > Physics > Optics. Light |
Department: | Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics Technology and Innovation Centre > Photonics Technology and Innovation Centre > Bionanotechnology |
Depositing user: | Pure Administrator |
Date deposited: | 26 Mar 2013 10:35 |
Last modified: | 03 Jan 2019 13:39 |
Related URLs: | |
URI: | https://strathprints.strath.ac.uk/id/eprint/43328 |
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