Individually-addressed planar nanoscale InGaN-based light emitters

Massoubre, D. and Edwards, P. R. and Xie, E. and Richardson, E. and Watson, I. M. and Gu, E. and Martin, R. W. and Dawson, M. D. (2012) Individually-addressed planar nanoscale InGaN-based light emitters. In: 2012 IEEE Photonics Conference (IPC), 2012-09-23 - 2012-09-27. (https://doi.org/10.1109/IPCon.2012.6358842)

Abstract

We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.

ORCID iDs

Edwards, P. R. ORCID: https://orcid.org/0000-0001-7671-7698

Xie, E. ORCID: https://orcid.org/0000-0001-7776-8091

Watson, I. M. ORCID: https://orcid.org/0000-0002-8797-3993

Gu, E. ORCID: https://orcid.org/0000-0002-7607-9902

Martin, R. W. ORCID: https://orcid.org/0000-0002-6119-764X

Dawson, M. D. ORCID: https://orcid.org/0000-0002-6639-2989

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  Item type:	Conference or Workshop Item(Paper)
  ID code:	43328
  Dates:	Date Event 23 September 2012 Published
  Keywords:	InGaN-based light emitters , nanoscale-LEDs , photonics, optics, Optics. Light
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics Technology and Innovation Centre > Photonics Technology and Innovation Centre > Bionanotechnology
  Depositing user:	Pure Administrator
  Date deposited:	26 Mar 2013 10:35
  Last modified:	25 Nov 2022 01:46
  Related URLs:	Scopus publication
  URI:	https://strathprints.strath.ac.uk/id/eprint/43328