Individually-addressed planar nanoscale InGaN-based light emitters

Massoubre, D. and Edwards, P. R. and Xie, E. and Richardson, E. and Watson, I. M. and Gu, E. and Martin, R. W. and Dawson, M. D. (2012) Individually-addressed planar nanoscale InGaN-based light emitters. In: 2012 IEEE Photonics Conference (IPC), 2012-09-23 - 2012-09-27.

Full text not available in this repository.Request a copy from the Strathclyde author

Official URL: https://doi.org/10.1109/IPCon.2012.6358842

Abstract

We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.

Author(s):	Massoubre, D., Edwards, P. R., Xie, E., Richardson, E., Watson, I. M., Gu, E., Martin, R. W. and Dawson, M. D.
Item type:	Conference or Workshop Item(Paper)
ID code:	43328
Keywords:	InGaN-based light emitters , nanoscale-LEDs , photonics, optics, Optics. Light
Subjects:	Science > Physics > Optics. Light
Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics Technology and Innovation Centre > Photonics Technology and Innovation Centre > Bionanotechnology
Depositing user:	Pure Administrator
Date deposited:	26 Mar 2013 10:35
Last modified:	03 Jan 2019 13:39
Related URLs:	Scopus publication
URI:	https://strathprints.strath.ac.uk/id/eprint/43328
Export data:

CORE (COnnecting REpositories)