Individually-addressed planar nanoscale InGaN-based light emitters

Massoubre, D. and Edwards, P. R. and Xie, E. and Richardson, E. and Watson, I. M. and Gu, E. and Martin, R. W. and Dawson, M. D. (2012) Individually-addressed planar nanoscale InGaN-based light emitters. In: 2012 IEEE Photonics Conference (IPC), 2012-09-23 - 2012-09-27. (https://doi.org/10.1109/IPCon.2012.6358842)

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Abstract

We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.

ORCID iDs

Massoubre, D., Edwards, P. R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Xie, E. ORCID logoORCID: https://orcid.org/0000-0001-7776-8091, Richardson, E., Watson, I. M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Gu, E. ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X and Dawson, M. D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
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