Raman-scattering study of the InGaN alloy over the whole composition range

Hernandez, S. and Cusco, R. and Pastor, D. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Calleja, E. (2005) Raman-scattering study of the InGaN alloy over the whole composition range. Journal of Applied Physics, 98. 013511-03515. ISSN 0021-8979

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    Abstract

    We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.

    Author(s):Hernandez, S., Cusco, R., Pastor, D., Artus, L., O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Nanishi, Y. and Calleja, E.
    Item type:Article
    ID code:10017
    Keywords:indium compounds, phonon dispersion relations, phonon-phonon interactions, , spectral line shift, energy gap, Raman spectra, semiconductor epitaxial layers, gallium compounds, III-V semiconductors, wide band gap semiconductors , Physics, Physics and Astronomy(all)
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Faculty of Science > Physics > Institute of Photonics
    Depositing user: Strathprints Administrator
    Date deposited:14 Nov 2011 14:14
    Last modified:11 Oct 2019 00:33
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/10017
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