Picture of boy being examining by doctor at a tuberculosis sanatorium

Understanding our future through Open Access research about our past...

Strathprints makes available scholarly Open Access content by researchers in the Centre for the Social History of Health & Healthcare (CSHHH), based within the School of Humanities, and considered Scotland's leading centre for the history of health and medicine.

Research at CSHHH explores the modern world since 1800 in locations as diverse as the UK, Asia, Africa, North America, and Europe. Areas of specialism include contraception and sexuality; family health and medical services; occupational health and medicine; disability; the history of psychiatry; conflict and warfare; and, drugs, pharmaceuticals and intoxicants.

Explore the Open Access research of the Centre for the Social History of Health and Healthcare. Or explore all of Strathclyde's Open Access research...

Image: Heart of England NHS Foundation Trust. Wellcome Collection - CC-BY.

Strathprints

Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys

Novikov, S.V. and Yu, K.M. and Levander, A. and Detert, D. and Sarney, W.L. and Liliental-Weber, Z. and Shaw, M. and Martin, R.W. and Svensson, S.P. and Walukiewicz, W. and Foxon, C.T. (2013) Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (3). ISSN 1071-1023

[img]
Preview
 PDF (JVST_B_03C102_Novikov)
JVST_B_03C102_Novikov.pdf
Final Published Version
Download (983kB) | Preview

Abstract

GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here, they present first results on PA-MBE growth and properties of N-rich GaNSb and InNAs alloys and compare these with GaNAs and GaNBi alloys. The enhanced incorporation of As and Sb was achieved by growing the layers at extremely low growth temperatures. Although layers become amorphous for high As, Sb, and Bi content, optical absorption measurements show a progressive shift of the optical absorption edge to lower energy. The large band gap range and controllable conduction and valence band positions of these HMAs make them promising materials for efficient solar energy conversion devices.

Item type: Article
ID code: 47230
Keywords: molecular beam epitaxy, mismatched, N-rich GaNSb, InN1xAsx , alloys, Electrical engineering. Electronics Nuclear engineering, Physics, Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Science > Physics
Department: Faculty of Science > Physics
Technology and Innovation Centre > Bionanotechnology
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date deposited: 19 Mar 2014 11:40
Last modified: 12 Feb 2019 14:28
Related URLs:
URI: https://strathprints.strath.ac.uk/id/eprint/47230
Export data:
CORE (COnnecting REpositories)