Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys

Novikov, S.V. and Yu, K.M. and Levander, A. and Detert, D. and Sarney, W.L. and Liliental-Weber, Z. and Shaw, M. and Martin, R.W. and Svensson, S.P. and Walukiewicz, W. and Foxon, C.T. (2013) Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (3). ISSN 1071-1023

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    Abstract

    GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here, they present first results on PA-MBE growth and properties of N-rich GaNSb and InNAs alloys and compare these with GaNAs and GaNBi alloys. The enhanced incorporation of As and Sb was achieved by growing the layers at extremely low growth temperatures. Although layers become amorphous for high As, Sb, and Bi content, optical absorption measurements show a progressive shift of the optical absorption edge to lower energy. The large band gap range and controllable conduction and valence band positions of these HMAs make them promising materials for efficient solar energy conversion devices.

    Creators(s): Novikov, S.V., Yu, K.M., Levander, A., Detert, D., Sarney, W.L., Liliental-Weber, Z., Shaw, M. ORCID logoORCID: https://orcid.org/0000-0002-7625-5224, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Svensson, S.P., Walukiewicz, W. and Foxon, C.T.;
    Item type:Article
    ID code:47230
    Keywords:molecular beam epitaxy, mismatched, N-rich GaNSb, InN1xAsx , alloys, Electrical engineering. Electronics Nuclear engineering, Physics, Electrical and Electronic Engineering, Condensed Matter Physics
    Subjects:Technology > Electrical engineering. Electronics Nuclear engineering
    Science > Physics
    Department:Faculty of Science > Physics
    Technology and Innovation Centre > Bionanotechnology
    Technology and Innovation Centre > Photonics
    Depositing user: Pure Administrator
    Date deposited:19 Mar 2014 11:40
    Last modified:26 Dec 2020 01:51
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/47230
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