Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys
Novikov, S.V. and Yu, K.M. and Levander, A. and Detert, D. and Sarney, W.L. and Liliental-Weber, Z. and Shaw, M. and Martin, R.W. and Svensson, S.P. and Walukiewicz, W. and Foxon, C.T. (2013) Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (3). ISSN 1071-1023 (https://doi.org/10.1116/1.4774028)
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Abstract
GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here, they present first results on PA-MBE growth and properties of N-rich GaNSb and InNAs alloys and compare these with GaNAs and GaNBi alloys. The enhanced incorporation of As and Sb was achieved by growing the layers at extremely low growth temperatures. Although layers become amorphous for high As, Sb, and Bi content, optical absorption measurements show a progressive shift of the optical absorption edge to lower energy. The large band gap range and controllable conduction and valence band positions of these HMAs make them promising materials for efficient solar energy conversion devices.
ORCID iDs
Novikov, S.V., Yu, K.M., Levander, A., Detert, D., Sarney, W.L., Liliental-Weber, Z., Shaw, M. ORCID: https://orcid.org/0000-0002-7625-5224, Martin, R.W. ORCID: https://orcid.org/0000-0002-6119-764X, Svensson, S.P., Walukiewicz, W. and Foxon, C.T.;-
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Item type: Article ID code: 47230 Dates: DateEvent1 May 2013PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering
Science > PhysicsDepartment: Faculty of Science > Physics
Technology and Innovation Centre > Bionanotechnology
Technology and Innovation Centre > PhotonicsDepositing user: Pure Administrator Date deposited: 19 Mar 2014 11:40 Last modified: 11 Nov 2024 10:38 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/47230