Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Wallace, M. J. and Edwards, P. R. and Kappers, M. J. and Hopkins, M. A. and Oehler, F. and Sivaraya, S. and Oliver, R. A. and Humphreys, C. J. and Allsopp, D. W. E. and Martin, R. W. (2015) Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117 (11). 115705. ISSN 0021-8979 (https://doi.org/10.1063/1.4915628)

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Abstract

In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.

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