InGaN nano-ring structures for high-efficiency light emitting diodes

Choi, H. W. and Jeon, C. W. and Liu, C. and Watson, I. M. and Dawson, M. D. and Edwards, P. R. and Martin, R. W. and Tripathy, S. and Chua, S. J. (2004) InGaN nano-ring structures for high-efficiency light emitting diodes. Applied Physics Letters, 86 (2). 021101. ISSN 0003-6951

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    Abstract

    A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

    ORCID iDs

    Choi, H. W., Jeon, C. W., Liu, C., Watson, I. M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Dawson, M. D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Edwards, P. R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Tripathy, S. and Chua, S. J.;
    • Item type:Article
      ID code:5261
      Dates:
      Date
      Event
      30 December 2004
      Published
      9 November 2004
      Accepted
      Keywords:indium compounds, gallium compounds, nanostructured materials, nanolithography, optical fabrication, light emitting diodes, photonics, Optics. Light, Physics and Astronomy (miscellaneous)
      Subjects:Science > Physics > Optics. Light
      Department:Faculty of Science > Physics > Institute of Photonics
      Faculty of Science > Physics
      Depositing user: Strathprints Administrator
      Date deposited:31 Jan 2008
      Last modified:23 Sep 2021 03:31
      URI:https://strathprints.strath.ac.uk/id/eprint/5261
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